Integrated circuits having a contact region and methods for manufacturing the same

ABSTRACT

In an embodiment, an integrated circuit having a memory cell arrangement is provided. The memory cell arrangement may include a substrate, a fin structure disposed above the substrate, and a memory cell contacting region. The fin structure may include a memory cell region having a plurality of memory cell structures being disposed above one another, each memory cell structure having an active region of a respective memory cell. Furthermore, the memory cell contacting region may be configured to electrically contact each of the memory cell structures, wherein the memory cell contacting region may include a plurality of contact regions, which are at least partially displaced with respect to each other in a direction parallel to the main processing surface of the substrate.

TECHNICAL FIELD

Embodiments relate generally to integrated circuits having a contactregion and to methods for manufacturing the same.

BACKGROUND

The market pressure to increase the memory cell density is continuouslygrowing. This results in a higher demand in contacting the memory cellsin a memory cell arrangement, for example, in case of athree-dimensional integration of memory cells in an integrated circuit.

SUMMARY OF THE INVENTION

An embodiment provides an integrated circuit having a memory cellarrangement. The memory cell arrangement may include a substrate, a finstructure disposed above the substrate, and a memory cell contactingregion. The fin structure may include a memory cell region having aplurality of memory cell structures being disposed above one another,wherein each memory cell structure may have an active region of arespective memory cell. Furthermore, the memory cell contacting regionmay be configured to electrically contact each of the memory cellstructures, wherein the memory cell contacting region may include aplurality of contact regions, which are at least partially displacedwith respect to each other in a direction parallel to the mainprocessing surface of the substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

In the drawings, like reference characters generally refer to the sameparts throughout the different views. The drawings are not necessarilyto scale, emphasis instead generally being placed upon illustrating theprinciples of the invention. In the following description, variousembodiments of the invention are described with reference to thefollowing drawings, in which:

FIG. 1 shows a computer system having a memory cell arrangement inaccordance with an embodiment;

FIG. 2 shows a memory in accordance with an embodiment;

FIG. 3 shows a portion of a memory cell field of FIG. 2 in a top view inaccordance with an embodiment;

FIG. 4 shows an equivalent circuit diagram of a portion of a memory cellfield of FIG. 2 corresponding to the top view of FIG. 3 in accordancewith an embodiment;

FIG. 5 shows a portion of a fin structure in a cross sectional view inaccordance with an embodiment;

FIG. 6 shows a portion of a memory cell field in a cross sectional viewin accordance with an embodiment;

FIG. 7 shows a schematic top view of a portion of a switch matrix regionin accordance with an embodiment at a first state of manufacturing;

FIG. 8 shows a cross sectional view of a portion of a switch matrixregion of FIG. 7 in accordance with an embodiment at a first time ofmanufacturing;

FIG. 9 shows a cross sectional view of a portion of a switch matrixregion of FIG. 7 in accordance with an embodiment at a second time ofmanufacturing;

FIG. 10 shows a cross sectional view of a portion of a switch matrixregion of FIG. 7 in accordance with an embodiment at a third time ofmanufacturing;

FIG. 11 shows another cross sectional view of a portion of a switchmatrix region of FIG. 7 in accordance with an embodiment at the thirdtime of manufacturing;

FIG. 12 shows yet another cross sectional view of a portion of a switchmatrix region of FIG. 7 in accordance with an embodiment at the thirdtime of manufacturing;

FIG. 13 shows yet another cross sectional view of a portion of a switchmatrix region of FIG. 7 in accordance with an embodiment at the thirdtime of manufacturing;

FIG. 14 shows a schematic top view of a portion of a switch matrixregion in accordance with an embodiment after the manufacturing of wordlines;

FIG. 15 shows a cross sectional view of a portion of a switch matrixregion of FIG. 14 in accordance with an embodiment after themanufacturing of word lines;

FIG. 16 shows another cross sectional view of a portion of a switchmatrix region of FIG. 14 in accordance with an embodiment after themanufacturing of word lines;

FIG. 17 shows another cross sectional view of a portion of a switchmatrix region of FIG. 14 in accordance with an embodiment after themanufacturing of bit lines;

FIG. 18 shows yet another cross sectional view of a portion of a switchmatrix region of FIG. 14 in accordance with an embodiment after themanufacturing of bit lines;

FIG. 19 shows a cross sectional view of a portion of a switch matrixregion in accordance with another embodiment after the manufacturing ofbit lines;

FIG. 20 shows a cross sectional view of a portion of a switch matrixregion in accordance with yet another embodiment at a first time of themanufacturing;

FIG. 21 shows a cross sectional view of a portion of a switch matrixregion in accordance with yet another embodiment at a second time of themanufacturing;

FIG. 22 shows a cross sectional view of a portion of a switch matrixregion in accordance with yet another embodiment at a third time of themanufacturing;

FIG. 23 shows a cross sectional view of a portion of a switch matrixregion in accordance with yet another embodiment at a fourth time of themanufacturing;

FIG. 24 shows a cross sectional view of a portion of a switch matrixregion in accordance with yet another embodiment at a fifth time of themanufacturing;

FIG. 25 shows a cross sectional view of a portion of a switch matrixregion in accordance with yet another embodiment at a sixth time of themanufacturing;

FIG. 26 shows a cross sectional view of a portion of a switch matrixregion in accordance with yet another embodiment at a seventh time ofthe manufacturing;

FIG. 27 shows a cross sectional view of a portion of a switch matrixregion in accordance with yet another embodiment at an eighth time ofthe manufacturing;

FIG. 28 shows a cross sectional view of a portion of a switch matrixregion in accordance with yet another embodiment at a first time of themanufacturing;

FIG. 29 shows a cross sectional view of a portion of a switch matrixregion in accordance with yet another embodiment at a second time of themanufacturing;

FIG. 30 shows a cross sectional view of a portion of a switch matrixregion in accordance with yet another embodiment at a third time of themanufacturing;

FIG. 31 shows a cross sectional view of a portion of a switch matrixregion in accordance with yet another embodiment at a fourth time of themanufacturing;

FIG. 32 shows a cross sectional view of a portion of a switch matrixregion in accordance with yet another embodiment at a fifth time of themanufacturing;

FIG. 33 shows a cross sectional view of a portion of a source lineregion in accordance with an embodiment;

FIG. 34 shows a cross sectional view of a portion of a source lineregion in accordance with another embodiment;

FIG. 35 shows a cross sectional view of a portion of a source lineregion in accordance with yet another embodiment at a first time of themanufacturing;

FIG. 36 shows a cross sectional view of a portion of a source lineregion in accordance with yet another embodiment at a second time of themanufacturing;

FIG. 37 shows a cross sectional view of a portion of a source lineregion in accordance with yet another embodiment at a third time of themanufacturing;

FIG. 38 shows a method for manufacturing an integrated circuit having amemory cell arrangement in accordance with an embodiment;

FIG. 39 shows a method for manufacturing an integrated circuit having amemory cell arrangement in accordance with another embodiment; and

FIGS. 40A and 40B show a memory module (FIG. 40A) and a stackable memorymodule (FIG. 40B) in accordance with an embodiment.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

As used herein the terms connected and coupled are intended to includeboth direct and indirect connection and coupling, respectively.Furthermore, in an embodiment, the terms connected and coupled areintended to include a resistive connection or resistive coupling.

FIG. 1 shows a computer system 100 having a computer arrangement 102 anda memory cell arrangement 120 in accordance with an embodiment.

In various embodiments, the computer arrangement 102 may be configuredas or may include any device having a processor, e.g., having aprogrammable processor such as, e.g., a microprocessor (e.g., a CISC(complex instruction set computer) microprocessor or a RISC (reducedinstruction set computer) microprocessor). In various embodiments, thecomputer arrangement 102 may be configured as or may include a personalcomputer, a workstation, a laptop, a notebook, a personal digitalassistant (PDA), a radio telephone (e.g., a wireless radio telephone ora mobile radio telephone), a camera (e.g., an analog camera or a digitalcamera), or another device having a processor (such as, e.g., ahousehold appliance (such as, e.g., a washing machine, a dishwashingmachine, etc.)).

In an embodiment, the computer arrangement 102 may include one or aplurality of computer arrangement-internal random access memories (RAM)104, e.g., one or a plurality of computer arrangement-internal dynamicrandom access memories (DRAM), in which, for example, data to beprocessed may be stored. Furthermore, the computer arrangement 102 mayinclude one or a plurality of computer arrangement-internal read onlymemories (ROM) 106, in which, for example, the program code may bestored, which should be executed by a processor 108 (e.g., a processoras described above), which may also be provided in the computerarrangement 102.

Furthermore, in an embodiment, one or a plurality of input/outputinterfaces 110, 112, 114 (in FIG. 1, there are shown three input/outputinterfaces, in alternative embodiments, e.g., one, two, four, or evenmore than four input/output interfaces may be provided) configured toconnect one or a plurality of computer arrangement-external devices(such as, e.g., additional memory, one or a plurality of communicationdevices, one or a plurality of additional processors) to the computerarrangement 102, may be provided in the computer arrangement 102.

The input/output interfaces 110, 112, 114 may be implemented as analoginterfaces and/or as digital interfaces. The input/output interfaces110, 112, 114 may be implemented as serial interfaces and/or as parallelinterfaces. The input/output interfaces 110, 112, 114 may be implementedas one or a plurality of circuits, which implements or implement arespective communication protocol stack in its functionality inaccordance with the communication protocol which is respectively usedfor data transmission. Each of the input/output interfaces 110, 112, 114may be configured in accordance with any communication protocol. In anembodiment, each of the input/output interfaces 110, 112, 114 may beimplemented in accordance with one of the following communicationprotocols:

-   -   an ad hoc communication protocol such as, e.g., Firewire or        Bluetooth;    -   a communication protocol for a serial data transmission such as,        e.g., RS-232, Universal Serial Bus (USB) (e.g., USB 1.0, USB        1.1, USB 2.0, USB 3.0);    -   any other communication protocol such as, e.g., Infrared Data        Association (IrDA).

In an embodiment, the first input/output interface 110 is a USBinterface (in alternative embodiments, the first input/output interface110 may be configured in accordance with any other communicationprotocol such as, e.g., in accordance with a communication protocolwhich has been described above).

In an embodiment, the computer arrangement 102 optionally may include anadditional digital signal processor (DSP) 116, which may be provided,e.g., for digital signal processing. Furthermore, the computerarrangement 102 may include additional communication modules (not shown)such as, e.g., one or a plurality of transmitters, one or a plurality ofreceivers, one or a plurality of antennas, and so on.

The computer arrangement 102 may also include additional components (notshown), which are desired or required in the respective application.

In an embodiment, some or all of the circuits or components provided inthe computer arrangement 102 may be coupled with each other by means ofone or a plurality of computer arrangement-internal connections 118 (forexample, by means of one or a plurality of computer busses) configuredto transmit data and/or control signals between the respectively coupledcircuits or components.

Furthermore, as has been described above, the computer system 100, inaccordance with an embodiment, may include the memory cell arrangement120.

The memory cell arrangement 120 may in an embodiment be configured as anintegrated circuit. The memory cell arrangement 120 may further beprovided in a memory module having a plurality of integrated circuits,wherein at least one integrated circuit of the plurality of integratedcircuits includes a memory cell arrangement 120, as will be described inmore detail below. The memory module may be a stackable memory module,wherein some of the integrated circuit may be stacked one above theother. In an embodiment, the memory cell arrangement 120 is configuredas a memory card.

In an embodiment, the memory cell arrangement 120 may include a memorycell arrangement controller 122 (for example, implemented by means ofhard wired logic and/or by means of one or a plurality of programmableprocessors, e.g., by means of one or a plurality of programmableprocessors such as, e.g., one or a plurality of programmablemicroprocessors (e.g., CISC (complex instruction set computer)microprocessor(s) or RISC (reduced instruction set computer)microprocessor(s)).

The memory cell arrangement 120 may further include a memory 124 havinga plurality of memory cells. The memory 124 will be described in moredetail below.

In an embodiment, the memory cell arrangement controller 122 may becoupled with the memory 124 by means of various connections. Each of theconnections may include one or a plurality of lines and may thus have abus width of one or a plurality of bits. Thus, by way of example, anaddress bus 126 may be provided, by means of which one or a plurality ofaddresses of one or a plurality of memory cells may be provided by thememory cell arrangement controller 122 to the memory 124, on which anoperation (e.g., an erase operation, a write operation, a readoperation, an erase verify operation, or a write verify operation, etc.)should be carried out. Furthermore, a data write connection 128 may beprovided, by means of which the information to be written into therespectively addressed memory cell may be supplied by the memory cellarrangement controller 122 to the memory 124. Furthermore, a data readconnection 130 may be provided, by means of which the information storedin the respectively addressed memory cell may be read out of the memory124 and may be supplied from the memory 124 to the memory cellarrangement controller 122 and via the memory cell arrangementcontroller 122 to the computer arrangement 102, or, alternatively,directly to the computer arrangement 102 (in which case the firstinput/output interface 110 would directly be connected to the memory124). A bidirectional control/state connection 132 may be used forproviding control signals from the memory cell arrangement controller122 to the memory 124 or for supplying state signals representing thestate of the memory 124 from the memory 124 to the memory cellarrangement controller 122.

In an embodiment, the memory cell arrangement controller 122 may becoupled to the first input/output interface 110 by means of acommunication connection 134 (e.g., by means of a USB communicationconnection).

In an embodiment, the memory 124 may include one chip or a plurality ofchips. Furthermore, the memory cell arrangement controller 122 may beimplemented on the same chip (or die) as the components of the memory124 or on a separate chip (or die).

FIG. 2 shows the memory 124 of FIG. 1 in accordance with an embodimentin more detail.

In an embodiment, the memory 124 may include a memory cell field (e.g.,a memory cell array) 202 having a plurality of memory cells. The memorycells may be arranged in the memory cell field 202 in the form of amatrix in rows and columns, or, alternatively, for example, in zig zagform. In other embodiments, the memory cells may be arranged within thememory cell field 202 in any other manner or architecture.

In general, each memory cell may, for example, be coupled with a firstcontrol line (e.g., a word line) and with at least one second controlline (e.g., at least one bit line).

In an embodiment, in which the memory cells are arranged in the memorycell field 202 in the form of a matrix in rows and columns, a rowdecoder circuit 204 configured to select at least one row control line(e.g., a word line) of a plurality of row control lines 206 in thememory cell field 202 may be provided as well as a column decodercircuit 208 configured to select at least one column control line (e.g.,a bit line) of a plurality of column control lines 210 in the memorycell field 202.

In an embodiment, the memory cells are non-volatile memory cells.

A “non-volatile memory cell” may be understood as a memory cell storingdata even if it is not active. In an embodiment, a memory cell may beunderstood as being not active, e.g., if current access to the contentof the memory cell is inactive. In another embodiment, a memory cell maybe understood as being not active, e.g., if the power supply isinactive. Furthermore, the stored data may be refreshed on a regulartimely basis, but not, as with a “volatile memory cell” every fewpicoseconds or nanoseconds or milliseconds, but rather in a range ofhours, days, weeks or months. Alternatively, the data may not need to berefreshed at all in some designs.

The non-volatile memory cells may be, e.g., charge storing random accessmemory cells (e.g., floating gate memory cells or charge trapping memorycells).

In alternative embodiments, also other types of non-volatile memorycells may be used.

Furthermore, the memory cells may be electrically erasable read onlymemory cells (EEPROM).

In an embodiment, each charge trapping memory cell includes a chargetrapping layer structure for trapping electrical charge carriers. Thecharge trapping layer structure may include one or a plurality of twoseparate charge trapping regions. In an embodiment, the charge trappinglayer structure includes a dielectric layer stack including at least onedielectric layer or at least two dielectric layers being formed aboveone another, wherein charge carriers can be trapped in at least onedielectric layer. By way of example, the charge trapping layer structureincludes a charge trapping layer, which may include or consist of one ormore materials being selected from a group of materials that consistsof: aluminum oxide (Al₂O₃), yttrium oxide (Y₂O₃), silicon nitride(Si₃N₄), hafnium oxide (HfO₂), lanthanum oxide (LaO₂), zirconium oxide(ZrO₂), amorphous silicon (a-Si), tantalum oxide (Ta₂O₅), titanium oxide(TiO₂), and/or an aluminate. An example for an aluminate is an alloy ofthe components aluminum, zirconium and oxygen (AlZrO). In oneembodiment, the charge trapping layer structure includes a dielectriclayer stack including three dielectric layers being formed above oneanother, e.g., a first oxide layer (e.g., silicon oxide), a nitridelayer as charge trapping layer (e.g., silicon nitride) on the firstoxide layer, and a second oxide layer (e.g., silicon oxide or aluminumoxide) on the nitride layer. This type of dielectric layer stack is alsoreferred to as ONO layer stack. In an alternative embodiment, the chargetrapping layer structure includes two, four or even more dielectriclayers being formed above one another. In another embodiment, the chargetrapping layer structure may include a so-called TANOS layer stack,which may include a substrate, an oxide layer (e.g., silicon oxide) onthe substrate (the oxide layer, e.g., having a layer thickness in therange from about 3 nm to about 6 nm), a nitride layer (e.g., siliconnitride) on the oxide layer (the nitride layer, e.g., having a layerthickness in the range from about 3 nm to about 10 nm), a high-kdielectric layer (e.g., having a dielectric constant higher than 3.9) onthe nitride layer (the high-k dielectric layer including, e.g., aluminumoxide, and the high-k dielectric layer, e.g., having a layer thicknessin the range from about 5 nm to about 15 nm), and a metal gate layer(e.g., made of tantalum nitride (TaN) or another metal having a highwork function) on the high-k dielectric layer (the metal gate layer,e.g., having a layer thickness in the range from about 20 nm to about300 nm).

In an embodiment, the memory cells may be multi-bit memory cells. Asused herein the term “multi-bit” memory cell is intended to, e.g.,include memory cells which are configured to store a plurality of bitsby spatially separated electric charge storage regions or currentconductivity regions, thereby representing a plurality of logic states.

In another embodiment, the memory cells may be multi-level memory cells.As used herein the term “multi-level” memory cell is intended to, e.g.,include memory cells which are configured to store a plurality of bitsby showing distinguishable voltage or current levels dependent on theamount of electric charge stored in the memory cell or the amount ofelectric current flowing through the memory cell, thereby representing aplurality of logic states.

In an embodiment, address signals are supplied to the row decodercircuit 204 and the column decoder circuit 208 by means of the addressbus 126, which is coupled to the row decoder circuit 204 and to thecolumn decoder circuit 208. The address signals uniquely identify atleast one memory cell to be selected for an access operation (e.g., forone of the above described operations). The row decoder circuit 204selects at least one row and thus at least one row control line 206 inaccordance with the supplied address signal. Furthermore, the columndecoder circuit 208 selects at least one column and thus at least onecolumn control line 210 in accordance with the supplied address signal.

The electrical voltages that are provided in accordance with theselected operation, e.g., for reading, programming (e.g., writing) orerasing of one memory cell or of a plurality of memory cells, areapplied to the selected at least one row control line 206 and to the atleast one column control line 210.

In the case that each memory cell is configured in the form of a fieldeffect transistor (e.g., in the case of a charge storing memory cell),in an embodiment, the respective gate terminal is coupled to the rowcontrol line 206 and a first source/drain terminal is coupled to a firstcolumn control line 210. A second source/drain terminal may be coupledto a second column control line 210. Alternatively, with a firstsource/drain terminal of an adjacent memory cell, which may then, e.g.,also be coupled to the same row control line 206 (this is the case,e.g., in a NAND arrangement of the memory cells in the memory cell field202).

In an embodiment, by way of example, for reading or for programming, asingle row control line 206 and a single column control line 210 areselected at the same time and are appropriately driven for reading orprogramming of the thus selected memory cell. In an alternativeembodiment, it may be provided to respectively select a single rowcontrol line 206 and a plurality of column control lines 210 at the sametime for reading or for programming, thereby allowing to read or programa plurality of memory cells at the same time.

Furthermore, in an embodiment, the memory 124 includes at least onewrite buffer memory 212 and at least one read buffer memory 214. The atleast one write buffer memory 212 and the at least one read buffermemory 214 are coupled with the column decoder circuit 208. Depending onthe type of memory cell, reference memory cells 216 may be provided forreading the memory cells.

In order to program (e.g., write) a memory cell, the data to beprogrammed may be received by a data register 218, which is coupled withthe data write connection 128, by means of the data write connection128, and may be buffered in the at least one write buffer memory 212during the write operation.

In order to read a memory cell, the data read from the addressed memorycell (represented, e.g., by means of an electrical current, which flowsthrough the addressed memory cell and the corresponding column controlline 210, which may be compared with a current threshold value in orderto determine the content of the memory cell, wherein the currentthreshold value may e.g. be dependent from the reference memory cells216) are, e.g., buffered in the read buffer memory 214 during the readoperation. The result of the comparison und therewith the logic state ofthe memory cell (wherein the logic state of the memory cell representsthe memory content of the memory cell) may then be stored in the dataregister 218 and may be provided via the data read connection 130, withwhich the data register 218 may be coupled.

The access operations (e.g. write operations, read operations, or eraseoperations) may be controlled by a memory-internal controller 220, whichin turn may be controlled by the memory cell arrangement controller 122by means of the bidirectional control/state connection 132. In analternative embodiment, the data register 218 may directly be connectedto the memory cell arrangement controller 122 by means of thebidirectional control/state connection 132 and thus directly controlledthereby. In this example, the memory-internal controller 220 may beomitted.

In an embodiment, the memory cells of the memory cell field may begrouped into memory blocks or memory sectors, which may be commonlyerased in an erase operation. In an embodiment, there are so many memorycells included in a memory block or memory sector such that the sameamount of data may be stored therein as compared with a conventionalhard disk memory sector (e.g., 512 byte), although a memory block ormemory sector may alternatively also store another amount of data.

Furthermore, other common memory components (e.g., peripheral circuitssuch as, e.g., charge pump circuits, etc.) may be provided in the memory124, but they are neither shown in FIG. 1 nor in FIG. 2 for reasons ofclarity.

As shown in FIG. 3, a layout of the portion 300 of the memory cell field202 in accordance with an embodiment with a plurality of stackednon-volatile memory cells, is shown in a top view. It should beappreciated that FIG. 3 merely serves as an illustration of fabricatingstacked non-volatile memory cells. The individual components shown inFIG. 3 are not true to scale.

The stacked non-volatile memory cells are arranged on vertical fins 302.Thirty-two fins 302 are shown in FIG. 3. The thirty-two fins 302 arearranged substantially parallel to each other on a substrate. Selectionlines 304 (also referred to as word lines 304) are arranged in adirection within a plane that is perpendicular to a plane that is, e.g.,defined by the longitudinal direction and the height direction of thefins 302 and are serving as lines for selecting a certain memory cellwithin the large number of thousands or millions or even billions ormore of provided memory cells. The selection lines 304 are arranged in amemory cell region 306. Fourty-four word lines 304 are shown on top ofthe thirty-two fins 302 in a first portion of the memory cell region 306and additional 44 word lines 304 (10 of them are shown in FIG. 3) areprovided on the right hand side next to a source line region 308 (whichwill be described in more detail below) in a second portion of thememory cell region 306 and further additional 44 word lines 304 (10 ofthem are shown in FIG. 3) are provided on the left hand side next to aswitch matrix region 310 (which also will be described in more detailbelow) in a third portion of the memory cell region 306. In accordancewith an embodiment, any number of word lines 304 may be provided, e.g.,16 word lines 304, 32 word lines 304, 64 word lines 304, 128 word lines304, etc.

The memory cell field 202 may include a plurality of periodicallyrepeatedly occurring portions of the fins 302, wherein each periodicallyrepeatedly occurring portion may include a memory cell region 306, asource line region 308, and a switch matrix region 310.

In an example, the switch matrix region 310 may include a plurality ofcontact plugs 312, which will be described in more detail below. Atleast two bit line contact plugs 312 provide an electrical contact toeach of the portion of the fins 302. The bit line contact plugs 312 andthe word lines 304 can be connected to a readout circuit (not shown),thus enabling individual memory cells to be selected and read out bymeans of an external circuit, e.g., the readout circuit. In anembodiment, the readout circuit may be implemented on the same die asthe memory cells.

Between the two respective bit line contact plugs 312 for addressing arespective memory cell string within each fin 302, there are provided aplurality of (e.g., eigth) switch selection lines 314, 316, 318, 320,322, 324, 326, 328, wherein the shown four first switch selection lines314, 316, 318, 320, may be provided to individually address and select arespective memory cell string within a respective fin 302 in the firstportion of the memory cell region 306 and the shown four second switchselection lines 322, 324, 326, 328, may be provided to individuallyaddress and select a respective memory cell string within a respectivefin 302 in the third portion of the memory cell region 306.

The switch selection lines 314, 316, 318, 320, 322, 324, 326, 328, arearranged in a switch matrix in the switch matrix region 310 and may beused to select a certain memory cell along the fins 302, as will bedescribed in more detail below.

As will be described in more detail below, in an alternative embodiment,a first additional switch selection line (not shown in FIG. 3) may beprovided between a first selection line 314 of the fin 302 and a firstword line 304 of a respective memory cell region 306 including thememory cells. The first additional switch selection line may also bereferred to as a string selection line. In an embodiment, the switchmatrix may include the string selection line. Furthermore, in anembodiment, a second additional switch selection line 330 may beprovided (as part of the source line region 308) next to the word lines304 opposite to the first additional switch selection line. The secondadditional switch selection line 330 may also be referred to as groundselection line 330. Moreover, a source line 332 may be provided next tothe second additional switch selection line 330 in the source lineregion 308. Next to the source line 332, there may be provided anothersecond additional switch selection line 334 adjacent to a first wordline 304 of the second portion of the memory cell region 306. In otherwords, the source line 332 may be located between two second additionalswitch selection lines 330, 334. Moreover, further word lines 304 may beprovided next to the other second additional switch selection line 334,optionally followed by another first additional switch selection line(not shown in FIG. 3). In an embodiment, this described structure may berepeatedly provided along the fins 302. The switch selection lines 314,316, 318, 320, 322, 324, 326, 328, may have associated selectiontransistors, generally speaking associated selection gates, whosefunction will be described in more detail below. The additional switchselection lines 330, 334, serve as a switch between the memory cells andthe transistors of the switch matrix. The additional switch selectionlines 330, 334, may also have associated selection transistors,generally speaking, associated selection gates. Therefore, except forthe selection gate of the additional switch selection lines 330, 334,the gate lengths of the selection gates, for example, in the case thefirst additional switch selection lines are provided, the switchselection lines 314, 316, 318, 320, 322, 324, 326, 328, can be designedhaving significantly smaller gate lengths, since voltages of aboutV_(CC) may be applied and the isolation of the floating node duringprogramming inhibition may be done by the selection gate of therespective additional switch selection line 330, 334. In an embodiment,the second additional switch selection lines 330, 334, may be separatedfrom each other. In another embodiment, the second additional switchselection lines 330, 334, can be electrically coupled with one another,in other words, the second additional switch selection lines 330, 334,can be short-circuited. In accordance with an embodiment, the additionalswitch selection lines 330, 334, represent a gate length that is greaterthan the gate length of the switch selection lines 314, 316, 318, 320,322, 324, 326, 328, in order to reduce the leakage current to ensurehigh boost voltage in the NAND string during program inhibit. In anembodiment, the additional switch selection lines 330, 334, may have agate length in the range of about 150 nm to about 250 nm, e.g., in therange of about 175 nm to about 225 nm, e.g. of about 200 nm. In anembodiment, the switch selection lines 314, 316, 318, 320, 322, 324,326, 328, may have a gate length in the range of about 50 nm to about130 nm, e.g., in the range of about 75 nm to about 120 nm, e.g., ofabout 100 nm. Furthermore, in an embodiment, the source line 332 mayhave a width in a range of about 100 nm to about 300 nm.

In an embodiment, the additional switch selection lines 330, 334, mayrespectively include a charge trapping layer, whereas in an alternativeembodiment, the additional switch selection lines 330, 334, have nocharge trapping layers. Furthermore, in an embodiment, the switchselection lines 314, 316, 318, 320, 322, 324, 326, 328, may respectivelyinclude a charge trapping layer, whereas in an alternative embodiment,the switch selection lines 314, 316, 318, 320, 322, 324, 326, 328, haveno charge trapping layers.

By way of example, the programming of a memory cell of the memory cellfield 202 can be carried out as follows:

The bit line of the memory cell to be programmed may be provided with,e.g., 0 V, the word line of the memory cell to be programmed may beprovided with, e.g., +25 V. Furthermore, the directly adjacent bit linesof the bit line of the memory cell to be programmed may be providedwith, e.g., 3.3 V. The additional switch selection lines 330, 334, maybe provided with, e.g., 3.3 V. The other word lines 304 corresponding tothe memory cells not to be programmed may be provided with a passvoltage of, e.g., 10 V.

In an alternative embodiment, an additional switch matrix formed byadditional switch selection lines (not shown) may be arranged betweenthe source line 332 and the second additional switch selection line(e.g., in a similar manner as described above, four switch selectionlines) and the source line 332 and the other second additional switchselection line (e.g., in a similar manner as described above, fourswitch selection lines), respectively.

FIG. 4 shows an equivalent circuit diagram of a portion of a memory cellfield of FIG. 2 corresponding to the top view of FIG. 3 in accordancewith an embodiment.

The equivalent circuit diagram shows the memory cells 402 of the memorycell region 306, wherein, e.g., the gate terminals of transistorsforming the memory cells 402 are coupled with the word lines 304.Furthermore, switch selection gates (e.g., implemented as transistors,e.g. implemented as field effect transistors, e.g., implemented as finfield effect transistors) 404, 406, 408, 410, 412, 414, 416, 418, areprovided in the switch matrix region 310 to form the switch matrix. Inan example, e.g., the gate terminal of a respective transistor of thetransistors forming the switch selection gates 404, 406, 408, 410, 412,414, 416, 418, may be coupled with a respective one of the switchselection lines 314, 316, 318, 320, 322, 324, 326, 328. In an example,each switch selection gate 404, 406, 408, 410, 412, 414, 416, 418, isconfigured to select a respective one of a plurality of memory cellstrings 420, 422, 424, 426, 428, 430, 432, 434, in other words arespective one of a plurality of memory cells 402 being seriallysource-to-drain coupled with each other. In an example, each memory cellstring 420, 422, 424, 426, 428, 430, 432, 434, is connected between arespective switch selection gate 404, 406, 408, 410, 412, 414, 416, 418,and a gate (e.g., implemented as a transistor, e.g., implemented as afield effect transistor, e.g., implemented as a fin field effecttransistor) 436, e.g., the gate terminal of which may be connected tothe second additional switch selection line 330 or the other secondadditional switch selection line 334, for example. Furthermore, as willalso be described in more detail below, normally-on structures 438, e.g.normally-on transistors may be provided in the switch matrix region 310,as shown in FIG. 4. All elements shown in FIG. 4 may be implemented inone respective fin structure 302. Thus, each fin structure 302 mayinclude a plurality of memory cell strings 420, 422, 424, 426, 428, 430,432, 434, for example, which may be formed in a stacked manner above oneanother, as will be described in more detail below.

FIG. 5 shows a portion 500 of the memory cell field 202 in a crosssectional view in accordance with an embodiment. The cross sectionalview is chosen in a direction perpendicular to the semiconductor surfaceof the substrate (e.g., the wafer) and along a word line 304.

As shown in FIG. 5, the portion 500 of the memory cell field 202 may bearranged on a semiconductor substrate 502. The semiconductor substrate502 may be part of one or more semiconductor wafers, e.g., of one ormore semiconductor wafers including semiconductor material, aninsulating layer and another semiconductor layer on top of theinsulating layer. As will be discussed in more detail below, the one ormore semiconductor layers may be formed by one or more silicon oninsulator (SOI) semiconductor wafers. In the case of a plurality of SOIsemiconductor wafers, the SOI semiconductor wafers may be coupledtogether by means of one or more wafer bonding processes.

In an embodiment, each fin structure 504 may include a part of thesemiconductor substrate 502, a first insulating layer 506 arranged on orabove the upper surface of the semiconductor substrate 502, a firstsemiconductor layer 508 arranged on or above the upper surface of thefirst insulating layer 506, a second insulating layer 510 arranged on orabove the upper surface of the first semiconductor layer 508, a secondsemiconductor layer 512 arranged on or above the upper surface of thesecond insulating layer 510, a third insulating layer 514 arranged on orabove the upper surface of the second semiconductor layer 512, a thirdsemiconductor layer 516 arranged on or above the upper surface of thethird insulating layer 514, a fourth insulating layer 518 arranged on orabove the upper surface of the third semiconductor layer 516, and afourth semiconductor layer 520 arranged on or above the upper surface ofthe fourth insulating layer 518. It is to be noted, that in analternative embodiment, two, three, or even more than four semiconductorlayers (respectively insulated from each other by means of a respectiveinsulating layer) may be provided to form respective memory cellstrings, as will be described in more detail below.

Illustratively, each fin structure 504 thus may include foursemiconductor fins formed by the respective semiconductor layers 508,512, 516, 520, the semiconductor fins being electrically isolated fromeach other by means of the respective insulating layers 506, 510, 514,518. A portion of the upper surface of the substrate 502 between the finstructures 504 may be exposed during the manufacturing process, in whichthe fin structures 504 are formed, as will be described in more detailbelow.

Furthermore, a patterned charge storage layer structure 522 may beprovided. The charge storage layer structure 522 may cover theinsulating layers 506, 510, 514, 518, the semiconductor layers 508, 512,516, 520, as well as the exposed surface portions of the surface of thesubstrate 502 between the fin structures 504.

In an embodiment, the charge storage layer structure 522 may be afloating gate structure including an insulating layer, e.g., a tunneloxide layer (e.g., having a thickness in the range from about 5 nm toabout 10 nm, e.g., having a thickness of about 5 nm), the insulatinglayer covering the insulating layers 506, 510, 514, 518, thesemiconductor layers 508, 512, 516, 520, as well as the exposed surfaceportions of the surface of the substrate 502 between the fin structures504. Further, the floating gate structure includes a floating gatelayer, e.g., made of polysilicon, being provided on the insulatinglayer. In an embodiment, the floating gate layer may includemetallically conductive portions forming the floating gates of therespective memory cells, and isolating portions to isolate respectivelyadjacent floating gates of adjacent memory cells. Furthermore, thefloating gate structure may include another insulating layer, e.g., agate oxide layer (e.g., having a thickness in the range of 5 nm to 15nm), being provided on the floating gate layer. In an embodiment, theother insulating layer may include a plurality of dielectric layers,e.g. an ONO layer stack (e.g., having an oxide layer (e.g., siliconoxide) e.g., having a layer thickness of about 5 nm on the floating gatelayer, a nitride layer (e.g. silicon nitride) e.g., having a layerthickness of about 5 nm on the oxide layer, and another oxide layer(e.g., silicon oxide) e.g., having a layer thickness of about 5 nm onthe nitride layer). In an alternative embodiment, the other insulatinglayer may include a high-k material (e.g., aluminum oxide) e.g., havinga layer thickness in the range from about 5 nm to about 15 nm).

In an alternative embodiment, the fin of the uppermost layer may have anadditional buffer oxide layer on top of the fin but below the chargestorage layer. In this way also the memory cells of the top most layerhas only two sidewalls as active area while the conduction via the toplayer is suppressed to a large degree. This may ensure more homogeneityof the electrical behavior of the top most active layer compared to thelayers below.

In another embodiment, the charge storage layer structure 522 may be ananocrystalline type layer structure having nanocrystals embedded in adielectric, the nanocrystals being configured to store electricalcharges.

In yet another embodiment, the charge storage layer structure 522 may bea charge trapping layer structure. The charge trapping layer structuremay include a dielectric layer stack including one or a plurality of atleast two dielectric layers being formed above one another, whereincharge carriers can be trapped in at least one of the at least twodielectric layers. By way of example, the charge trapping layerstructure includes a charge trapping layer, which may include or consistof one or more materials being selected from a group of materials thatconsists of: aluminum oxide (Al₂O₃), yttrium oxide (Y₂O₃), siliconnitride (Si₃N₄), hafnium oxide (HfO₂), lanthanum oxide (LaO₂), zirconiumoxide (ZrO₂), amorphous silicon (a-Si), tantalum oxide (Ta₂O₅), titaniumoxide (TiO₂), and/or an aluminate. An example for an aluminate is analloy of the components aluminum, zirconium and oxygen (AlZrO). In anembodiment, the charge trapping layer structure may include a dielectriclayer stack including three dielectric layers being formed above oneanother, namely a first oxide layer (e.g., silicon oxide), a nitridelayer as charge trapping layer (e.g., silicon nitride) on the firstoxide layer, and a second oxide layer (e.g., silicon oxide or aluminumoxide) on the nitride layer. This type of dielectric layer stack is alsoreferred to as ONO layer stack. The ONO layer stack may be conformallydeposited on the sidewalls of the fins and optionally in addition on theupper surface of the fins, in other words, on the vertical sidewalls ofthe insulating layers 506, 510, 514, 518 and the semiconductor layers508, 512, 516, 520, e.g., parallel to a plane that is defined by thelongitudinal direction and the height direction of the fins. In anotherembodiment, the charge trapping layer structure may include a so-calledTANOS layer stack, which may include a substrate, an oxide layer (e.g.silicon oxide) on the substrate (the oxide layer e.g. having a layerthickness in the range from about 3 nm to about 6 nm), a nitride layer(e.g., silicon nitride) on the oxide layer (the nitride layer, e.g.,having a layer thickness in the range from about 3 nm to about 10 nm), ahigh-k dielectric layer (e.g., having a dielectric constant higher than3.9) on the nitride layer (the high-k dielectric layer including, e.g.,aluminum oxide, and the high-k dielectric layer, e.g., having a layerthickness in the range from about 5 nm to about 15 nm), and a metal gatelayer (e.g., made of tanatlum nitride (TaN) or another metal having ahigh work function) on the high-k dielectric layer (the metal gatelayer, e.g., having a layer thickness in the range from about 20 nm toabout 300 nm).

In an alternative embodiment, the charge trapping layer structure 522may include two, four or even more dielectric layers being formed aboveone another.

On the patterned charge storage layer structure 522, a control gatelayer 524 may be provided, e.g., made of polysilicon or a metal such ascopper or aluminum. The control gate layer 524 may be conformallydeposited on the patterned charge storage layer structure 522.

In an embodiment, each fin structure 504 may extend from a top surfaceof the control gate layer 524 through the charge storage layer structure522, the plurality of semiconductor layers 508, 512, 516, 520, andthrough the plurality of insulating layers 506, 510, 514, 518, at leastinto the bottommost insulating layer, i.e., the first insulating layer506, or even into the semiconductor substrate 502, so that a bottomsurface 526 may be formed at a predetermined fin depth. As an option, anadditional dielectric layer (not shown) may be disposed on the bottomsurface 526, e.g., in case that the structure of the semiconductorsubstrate 502 is also used as a respective NAND string of memory cells.In an embodiment, however, the patterned charge storage layer structure522 is disposed directly on the bottom surface 526.

In an embodiment, the patterned charge storage layer structure 522 maybe arranged in a direction substantially perpendicular to theorientation of the fins. The control gate layer 524 and, afterpatterning, the word lines formed by the patterned control gate layer524 are arranged on the charge storage layer structure 522. The wordlines 304 may have sidewalls (not shown in FIG. 5) that are optionallycovered by a spacer oxide layer, which protects the active regions ofthe transistors to be formed during the implantation of doping atoms foroptionally forming source/drain regions (not shown for reasons ofclarity). The source/drain regions may be formed in the semiconductorlayers 508, 512, 516, 520, in the fins outside the word lines 304 andthe optional spacer oxide layer.

As shown in FIG. 5, each fin structure 504 may include four strings ofserially connected memory cells being formed by fin field effecttransistors (FinFET). The FinFETs are electrically isolated from thesemiconductor substrate 502 e.g. by means of one or more of theinsulating layers 506, 510, 514, 518.

The FinFETs are attached to the bottommost layer of the charge storagelayer structure 522, e.g., to the tunnel oxide layer (e.g., in the caseof a floating gate structure) or to the first oxide layer (e.g., in thecase of a charge trapping gate structure).

Thus, there may be four memory cells (with vertical sidewalls includedin fins forming an active region) formed one above the other, onerespective memory cell being included in a respective memory cellstring, the memory cells of which may be connected with each other inaccordance with a NAND type connection scheme in the first direction. Ingeneral, an arbitrary number of fins may be formed one above the other(in the height direction), each fin being isolated from the adjacent oneof the fins by means of a respective insulating layer, thereby formingan arbitrary number of memory cell strings, wherein the memory cells ofa respective memory cell string may be connected with each other inaccordance with a NAND type connection scheme. If a channel is formedallowing a current flow through a respective FinFET, the current flowsthrough the fin in a direction which is perpendicular to the paper planeof FIG. 5.

The charge storage layer structure 522 may provide non-volatile storageproperties.

In an embodiment, the memory cell field may include a further memorycell string, the memory cells of which may be connected with each otherin accordance with a NAND type connection scheme. The further memorycell string may be formed by the semiconductor structure formed belowthe first insulating layer 506, i.e., by the fin-shaped portion of thesemiconductor substrate 502. Thus, there may be, e.g., five memory cellsformed one above the other with the fin-shaped portion of the bulkmaterial, i.e., with the fin-shaped portion of the semiconductorsubstrate 502, providing the further NAND memory cell string.

A method for manufacturing a memory cell arrangement in accordance withan embodiment will be described in the following. The followingprocesses also further illustrate possible materials for the individualcomponents and respective geometrical characteristics.

Referring now to FIG. 6, a method for forming a non-volatile stackedmemory cell as shown in FIG. 5 is illustrated. In FIG. 6, a waferarrangement 600 including a plurality of wafers is shown. In anembodiment, a plurality of silicon on insulator wafer (SOI wafer) isprovided, e.g., four SOI wafers 602, 604, 606, 608. The SOI wafers 602,604, 606, 608 of the wafer arrangement 600 may be single crystalline SOIwafers or polycrystalline wafers. The wafer arrangement 600 may bemanufactured, e.g., by wafer bonding processes of the four SOI wafers602, 604, 606, 608. However, any other suitable process can be used tomanufacture the stack of multiple SOI wafers 602, 604, 606, 608. In analternative embodiment, any number, e.g., up to 10 wafers (e.g. SOIwafers) may be stacked above one another.

A bottommost first SOI wafer 602 has a carrier, e.g., semiconductorcarrier, e.g., a semiconductor substrate, e.g., the semiconductorsubstrate 502 (e.g., made of silicon), the first insulating layer 506arranged on or above the upper surface of the semiconductor substrate502, and the first semiconductor layer 508 arranged on or above theupper surface of the first insulating layer 506. A second SOI wafer 604may be disposed on or above the upper surface of the first semiconductorlayer 508. The second SOI wafer 604 may include the second insulatinglayer 510 arranged on or above the upper surface of the firstsemiconductor layer 508 and the second semiconductor layer 512 arrangedon or above the upper surface of the second insulating layer 510. Athird SOI wafer 606 may be disposed on or above the upper surface of thesecond semiconductor layer 512. The third SOI wafer 606 may include thethird insulating layer 514 arranged on or above the upper surface of thesecond semiconductor layer 512 and the third semiconductor layer 516arranged on or above the upper surface of the third insulating layer514. A fourth SOI wafer 608 may be disposed on or above the uppersurface of the third semiconductor layer 516. The fourth SOI wafer 608may include the fourth insulating layer 518 arranged on or above theupper surface of the third semiconductor layer 516 and the fourthsemiconductor layer 520 arranged on or above the upper surface of thefourth insulating layer 518. In an embodiment, the semiconductor layers508, 512, 516, 520, may be made of silicon (e.g., p-doped silicon) andthe insulating layers 506, 510, 514, 518, may be made of an oxide such,as e.g., silicon dioxide. In an embodiment, the semiconductor layers508, 512, 516, 520, and the insulating layers 506, 510, 514, 518, mayhave a respective thickness in the range of about 20 nm to about 1 μm.

In the periphery area of the memory cell arrangement to be manufactured,e.g., of the NAND memory cell arrangement to be manufactured, accordingto a CMOS process in accordance with an embodiment, high-voltage devicessuch as charge pumps, may be provided. The parasitic capacitance of sucha device should be small. Therefore, an SOI wafer stack is not used asthe substrate for the CMOS in the periphery area. In an embodiment, theSOI stack may be removed in the CMOS periphery area. Then, a thinsilicon dioxide layer may formed on the remaining semiconductorsubstrate 502 in the periphery area as well as on the top surface of thewafer arrangement 600, in other words on the upper surface of the fourthsemiconductor layer 520 and on the sidewalls of the step between theupper surface of the fourth semiconductor layer 520 and the exposedsemiconductor substrate 502 in the periphery area. The silicon dioxidelayer may have a thickness in the range of about 50 nm to about 500 nm.Then, the silicon dioxide layer may be anisotropically etched from thetop surface of the semiconductor substrate 502 in the CMOS peripheryarea. Thus, the array and a three dimensional (3D) switch matrix, whichwill be described in more detail below, as well as the side of the SOIstack part is covered by the silicon dioxide. Then, epitaxial silicon(Epi-Si) may be selectively deposited in the CMOS periphery area. Thethickness of the Epi-Si may be given by the height of the SOI stack sothat the entire wafer arrangement 600 may have the same thickness allover the NAND memory area and the CMOS periphery area. The shallowtrench isolation (STI) in the CMOS periphery area may be formed in aconventional way.

A thermal silicon oxide layer may then be formed on the upper surface ofthe structure that results in the processes described above. The thermalsilicon oxide layer has several functions. It acts as a scattering oxidefor the implant processes that follow and as a pad oxide for the siliconnitride hardmask. As will now be described in detail, the well doping(which may be adjusted using ion implantation, for example) for thethree dimensional structure may be special compared to a standard NANDprocess flow for FinFETs.

In the CMOS periphery area, the CMOS well implants may correspond to thestandard CMOS well implants.

In the memory cell region 306, in other words, in the memory cell arrayexcept for the area in which the switch matrix is to be manufactured,all four semiconductor layers 508, 512, 516, 520, are implanted withdoping atoms such as boron (B).

The manufacturing of the switch matrix region 310, which also may have athree dimensional structure (in one embodiment, the switch matrix region310 is provided in the fins 504), will be described in more detailbelow.

FIG. 7 shows a schematic top view 700 of a portion of the switch matrixregion 310 in accordance with an embodiment at a first state ofmanufacturing showing the fins 302. As shown in FIG. 7, a plurality ofcross sections are illustrated, the corresponding cross sectional viewsof which will be described in more detail below.

FIG. 8 shows a cross sectional view 800 of a portion of the switchmatrix region 310 of FIG. 7 taken along cross section A of FIG. 7 inaccordance with an embodiment at a first time of manufacturing. As shownin FIG. 8, starting with the wafer arrangement 600 of FIG. 6, astaircase structure 804 may be formed (e.g., etched) into the SOIwafers, in other words, into the wafer arrangement 600 of FIG. 6. Theformation of the staircase structure 804 may be realized, e.g., by meansof a process sequence of lithographic processes and etching processes(e.g., anisotropic etching processes such as e.g. reactive ion etchingprocesses (RIE)). In an alternative embodiment, the formation of thestaircase structure 804 may be realized, e.g., by means of a processsequence of lithographic, etching, spacer formation, and etchingprocesses. The processes will be described in more detail below.

As shown in FIG. 8, before forming the staircase structure 804, aninsulating layer 802 (which may be used as an auxiliary mask layer suchas, e.g., as a hard mask layer), e.g., made of silicon dioxide, siliconnitride or carbon, may be deposited on the upper surface of the fourthsemiconductor layer 520.

Then, using a corresponding first lithographic mask and an anisotropicetching process, a first partial staircase structure 806 may be formedby etching the layer stack of the wafer arrangement 600 in the switchmatrix region 310, e.g., in an area of the second switch selection line316 down to the third semiconductor layer 516, thereby exposing theupper surface 808 thereof as well as sidewall portions of the fourthinsulating layer 518 and the fourth semiconductor layer 520.Illustratively, a first step of the staircase structure 804 may beformed which may include the exposed upper surface 808 of the thirdsemiconductor layer 516 as the main portion of the first step and thesidewall portions of the fourth insulating layer 518 and the fourthsemiconductor layer 520 as the sidewall portion of the first step.

Next, using a corresponding second lithographic mask and an anisotropicetching process, a second partial staircase structure 810 may be formedby further etching the layer stack of the wafer arrangement 600 in theswitch matrix region 310, e.g. in an area of the third switch selectionline 318 down to the second semiconductor layer 512, thereby exposingthe upper surface 812 thereof as well as sidewall portions of the thirdinsulating layer 514 and the third semiconductor layer 516.Illustratively, a second step of the staircase structure 804 may beformed which may include the exposed upper surface 812 of the secondsemiconductor layer 512 as the main portion of the second step and thesidewall portions of the third insulating layer 514 and the thirdsemiconductor layer 516 as the sidewall portion of the second step.

Then, using a corresponding third lithographic mask and an anisotropicetching process, a third partial staircase structure 814 may be formedby further etching the layer stack of the wafer arrangement 600 in theswitch matrix region 310, e.g. in an area of the fourth switch selectionline 320 down to the first semiconductor layer 508, thereby exposing theupper surface 816 thereof as well as sidewall portions of the secondinsulating layer 510 and the second semiconductor layer 512.Illustratively, a third step of the staircase structure 804 may beformed which may include the exposed upper surface 816 of the firstsemiconductor layer 508 as the main portion of the third step and thesidewall portions of the second insulating layer 510 and the secondsemiconductor layer 512 as the sidewall portion of the second step.

FIG. 9 shows a cross sectional view 900 of a portion of the switchmatrix region 310 of FIG. 7 taken along cross section A of FIG. 7 inaccordance with an embodiment at a second time of manufacturing.

Then, an ion implantation process may be carried out using alithographic mask (e.g., a photo resist mask) which may be opened in astaircase structure area 902, wherein the ion implantation process mayinclude an implantation of, e.g., n-type doping atoms (also referred toas donator atoms, e.g. phosphorous) using a sequence of thresholdvoltage implantation processes. The implantation energy may be selectedsuch that the portions not covered by the lithographic mask of allsemiconductor layers 508, 512, 516, 520 may be doped with the n-typedoping atoms. The implantation energy of each single implant step may beselected according to the position of the semiconductor layers 508, 512,516, 520 to be in the range from about 10 keV to about 1000 keV.Furthermore, the concentration of the doping atoms in the implantedregions may be selected to be in the range from about 10¹⁷ cm⁻³ to about5*10¹⁷ cm⁻³. In this way, doped regions 904, 906, 908, 910, may beformed in the semiconductor layers 508, 512, 516, 520, in the staircasestructure area 902. In an example, phosphorous atoms may be used asdoping atoms to form the doped regions 904, 906, 908, 910. In analternative example, arsenic atoms or antimon atoms may be used asdoping atoms to form the doped regions 904, 906, 908, 910. It should bementioned that the implantation energies used in accordance with thedescribed embodiments are merely to be understood as examples and servefor illustration purposes. The implantation energies used in accordancewith the described embodiments may be dependent on the respectively usedmaterials and the layer thicknesses of the respectively provided layers.

Then, in an embodiment, a shallow ion implantation may be carried out toprovide a counterdoping of portions of the doped regions 904, 906, 908,910. The implantation energy in the shallow ion implantation may be setsuch that the doping atoms may be implanted in the respective uppermostsemiconductor layer 508, 512, 516, 520, which is immediately beneath theuppermost and exposed insulating layer. Thus, illustratively, in lateraldirection, only one of the semiconductor layers 508, 512, 516, 520, isrespectively doped with doping atoms, and the portions of thesemiconductor layer 508, 512, 516, 520, which are arranged below afurther insulating layer or another semiconductor layer 508, 512, 516,520, are not doped. Thus, in an example, the respective uppermostsemiconductor layer 508, 512, 516, 520, is locally counterdoped in thisimplantation process, thereby forming counterdoped regions 912, 914,916, 918. In an example, the counterdoped regions 912, 914, 916, 918,may be laterally displaced with respect to each other and may bearranged in different layers, in other words, also vertically displaced.In an example, the shallow ion implantation may be implemented as ap-type threshold voltage implantation. In an example, the counterdopedregions 912, 914, 916, 918, may be doped in such a manner thatnormally-off transistors may be formed using the counterdoped regions912, 914, 916, 918, as the active areas and thus as the channel regions.In an example, the implantation energy for the counter-implantation maybe selected to be in the range from about 1 keV to about 10 keV.Furthermore, the concentration of the doping atoms in the counterdopedregions 912, 914, 916, 918, may be selected to be in the range fromabout 2*10¹⁷ cm⁻³ to about 10¹⁸ cm⁻³. In this way, the counterdopedregions 912, 914, 916, 918, may be formed in the semiconductor layers508, 512, 516, 520, within and thus in the result next to the dopedregions 904, 906, 908, 910. In an example, boron atoms may be used asdoping atoms to form the counterdoped regions 912, 914, 916, 918. In anexample, the implantation energy used for the counter-implantation maybe selected to be smaller than the implantation energy used for theformation of the doped regions 904, 906, 908, 910.

FIG. 10 shows a cross sectional view 1000 of a portion of the switchmatrix region 310 of FIG. 7 taken along cross section A of FIG. 7 inaccordance with an embodiment at a third time of manufacturing.

Then, the space above the staircase structure 804 may be “filled” withinsulating material 1002. This may be carried out by depositinginsulating material (e.g., an oxide material such as, e.g., siliconoxide) on the surface of the previously formed staircase structure 804.In a following process, the upper surface of the insulating material maybe planarized, e.g. by means of a polishing process, e.g., a chemicalmechanical polishing (CMP) process. Next, an auxiliary mask layer 1004such as, e.g., a hard mask layer 1004 (e.g., made of a nitride (e.g.,silicon nitride) or a carbide (e.g., silicon carbide) may be deposited.The auxiliary mask layer 1004 may be provided as a mask for a followinggate contact etching process, as will be described in more detail below.

FIG. 11 shows a cross sectional view 1100 of a portion of the switchmatrix region 310 of FIG. 7 taken along cross section B of FIG. 7 inaccordance with an embodiment at the third time of manufacturing.

As shown in FIG. 11, by providing an etching process, e.g., ananisotropic etching process such as, e.g., a reactive ion etching (RIE)process using the appropriately patterned (e.g., using a suitablelithographic process) auxiliary mask layer 1004, the fin structures 504and therewith in the fins 504 active area strings (which are formed bythe remaining portions of the semiconductor layer 508, 512, 516, 520)may be formed which may run perpendicular to the staircase structure 804(in FIG. 11, the active area strings run perpendicular to the paperplane).

FIG. 12 shows a cross sectional view 1200 of a portion of the switchmatrix region 310 of FIG. 7 taken along cross section D of FIG. 7 inaccordance with an embodiment at the third time of manufacturing.

As shown in FIG. 12, in the space between the fin structures 504, thestructure may include only the semiconductor substrate 502 and the firstinsulating layer 506 arranged on or above the upper surface of thesemiconductor substrate 502.

FIG. 13 shows a cross sectional view 1300 of a portion of the switchmatrix region 310 of FIG. 7 taken along cross section C of FIG. 7 inaccordance with an embodiment at the third time of manufacturing.

As shown in FIG. 13, the bottommost counterdoped region 918 is coveredby the insulating material 1002. It should be noted that the othercounterdoped region 912, 914, 916, are positioned behind the bottommostcounterdoped region 918 seen in a direction perpendicular to the paperplane of FIG. 13.

FIG. 14 shows a schematic top view 1400 of a portion of the switchmatrix region 310 in accordance with an embodiment after themanufacturing of word lines 304. Furthermore, FIG. 15 shows a crosssectional view 1500 of a portion of the switch matrix region 301 of FIG.13 taken along cross section E of FIG. 13 in accordance with anembodiment after the manufacturing of word lines 304. FIG. 16 shows across sectional view 1600 of a portion of the switch matrix region 310of FIG. 13 taken along cross section F of FIG. 13 in accordance with anembodiment after the manufacturing of word lines 304.

Then, a layer stack which will form a charge storage layer structure ofthe memory cells to be formed in the memory cell region 306 isdeposited. In an example, a charge trapping layer stack as describedabove may be deposited on the formed fin structures. In an example, afirst oxide layer 1602 (e.g. made of silicon oxide) may be (e.g.,conformally) deposited on the structure shown in FIG. 13. Then, a chargetrapping layer 1604, e.g. a nitride layer 1604 (e.g., made of siliconnitride) may be (e.g., conformally) deposited on the first oxide layer1602. Furthermore, a second oxide layer 1606 (e.g. made of silicon oxideor aluminum oxide) may be (e.g., conformally) deposited on the chargetrapping layer 1604. Next, electrically conductive material 1608 (whichwill form the gate contacts and the word lines 304) such as, e.g.,polysilicon (doped or undoped) may be deposited on the second oxidelayer 1606 and thus between and above the fin structures 504 andtherewith illustratively being arranged next to the sidewalls of thesemiconductor layers 508, 512, 516, 520 and the insulating layers 510,514 518, 802. Thus, the electrically conductive material 1608 serves asthe gates for the memory cells (in the memory cell region 306) as wellas for the switch transistors formed in the switch matrix region 310.Then, using a lithographic process and an etching process, for example,the charge storage layer stack and the electrically conductive material1608 are patterned such that they form the charge storage structure andthe gates (and the word lines 304 and the switch selection lines 314,316, 318, 320, 322, 324, 326, 328).

FIG. 17 shows another cross sectional view 1700 of a portion of a switchmatrix region of FIG. 14 in accordance with an embodiment after themanufacturing of bit lines. As shown in FIG. 17, after the formation ofthe word lines 304 and the switch selection lines 314, 316, 318, 320,322, 324, 326, 328, middle-of-line (MOL) processes may be carried out tothe resulting structure as shown in FIGS. 15 and 16. By way of example,a dielectric material 1702 (e.g., a so-called poly-metal-dielectric(PMD) layer) may be deposited (e.g., by means of a chemical vapordeposition (CVD) process or a physical vapor deposition (PVD) process)on the auxiliary mask layer 1004 and the remaining exposed portions ofthe structure as shown in FIGS. 15 and 16. In an example, an oxide suchas, e.g., silicon oxide may be used for the dielectric material 1702,although any other suitable dielectric material may be used in analternative example. Then, contact holes 1704 may be formed (e.g.,etched, e.g., by means of an anisotropic etching such as, e.g., by meansof RIE etching) in the area above the counterdoped regions 912, 914,916, 918, and between the switch selection lines 314, 316, 318, 320,322, 324, 326, 328, thereby exposing respective upper surface portionsof the counterdoped regions 912, 914, 916, 918. Then, in an example,optionally, an n⁺-implantation process may be carried out through thecontact holes 1704 using n-type doping atoms (e.g., phosphorous atoms,arsenic atoms, or antimon atoms may be used) to form n⁺-doped regions1706 within the exposed counterdoped regions 912, 914, 916, 918 whichmay serve as bit line contact plugs for the bit line connections. Then,the contact holes 1704 may be filled with electrically conductivematerial 1708 such as, e.g., tungsten (W) or tungsten silicide (WSi) orany other suitable material. Furthermore, a metal layer may be deposited(e.g., using a CVD or PVD) and then patterned such that bit lines 1710,which may be respectively electrically coupled to the electricallyconductive material 1708 filled into the contact holes 1704. It shouldbe mentioned that in an alternative example, an arbitrary number ofmetal layers may be provided in the back-end-of-line (BEOL) processingto connect the respective components in the memory cell arrangement.

FIG. 18 shows yet another cross sectional view 1800 of a portion of aswitch matrix region of FIG. 14 in accordance with an embodiment afterthe manufacturing of bit lines. FIG. 18 shows both sides of the switchmatrix region 310 together with additional counterdoped regions 1802,1804, 1806 which are formed in a similar manner as the counterdopedregions 912, 914, 916, 918. Thus, the switch matrix region 310 inaccordance with an embodiment is completed.

In an embodiment, the metallization of the memory cell arrangement maybe provided such that the bit lines are provided in the so calledmetallization plane 0 (i.e., in the first metallization plane above theword lines), and the bit lines run, e.g., perpendicular to the maindirection of the word lines. Furthermore, supply lines may be providedin the so called metallization plane 1 (i.e., in the secondmetallization plane above the word lines, sometimes referred to asMetal 1) for contacting and reducing the RC delay of the well contacts(not shown), the source line 116 and the select gates. In an embodiment,one or more additional metallization planes may be provided above thementioned metallization planes. Furthermore, it should be mentioned thatin alternative embodiments, an arbitrary number of metallization planesmay be provided and the above mentioned lines may be provided indifferent metallization planes than described above.

In another embodiment, the bit lines may be arranged in themetallization plane 1 (i.e., in the second metallization plane above theword lines) and may be connected with the contact plugs, wherein themetallization plane 0 (i.e., the first metallization plane above theword lines, sometimes referred to as Metal 0) may provide the wellcontacts and the supply lines for the select gates and a low ohmicsource line further decreasing the ohmic resistance of the source line.

FIG. 19 shows a cross sectional view 1900 of a portion of the switchmatrix region 310 in accordance with another embodiment after themanufacturing of bit lines. This embodiment is similar to theembodiments described above and is manufactured in a similar manner.Therefore, in order to avoid unnecessary repetition, only thedifferences of this embodiment compared with the embodiments describedabove will be explained in the following.

In the embodiment shown in FIG. 19, a wider switch selection line 1902(wider than the select switch selection lines 314, 316, 318, 320, 322,324, 326, 328) may additionally be provided for decoding as a commonlyshared select gate. In this case, smaller select gates (and thus alsonarrower switch selection lines 1904, 1906, 1908, 1910 compared with thewidth of the switch selection lines 314, 316, 318, 320, 322, 324, 326,328 may be provided) for decoding. This may save chip area for thememory cell field 202. Furthermore, in this embodiment, a low resistancemay be provided (and thus higher read currents) due to shorter memorycell strings.

FIG. 20 shows a cross sectional view 2000 of a portion of the switchmatrix region 310 in accordance with yet another embodiment at a firsttime of the manufacturing. This embodiment is similar to the embodimentsdescribed above and is manufactured in a similar manner. Therefore, inorder to avoid unnecessary repetition, only the differences of thisembodiment compared with the embodiments described above will beexplained in the following. This embodiment mainly differs in the way ofmanufacturing the staircase structure 804, as will be described in moredetail below.

One difference of this embodiment compared with the embodiments shown inFIGS. 8 and 9, for example, may be seen in that the steps of thestaircase structure in accordance with this embodiment is manufactureddifferently after a doping of all semiconductor layers 508, 512, 516,520, in the staircase structure area 902. In this embodiment, the dopingmay be carried out using an ion implantation process. The ionimplantation process may include an implantation of, e.g., n-type dopingatoms (also referred to as donator atoms, e.g., phosphorous) using asequence of threshold voltage implantation processes. The implantationenergy may be selected such that the portions not covered by thelithographic mask of all semiconductor layers 508, 512, 516, 520 may bedoped with the n-type doping atoms. In an example, the implantationenergy may be selected to be in the range from about 10 keV to about1000 keV. Furthermore, the concentration of the doping atoms in theimplanted regions may be selected to be in the range from about 10¹⁷cm⁻³ to about 5*10¹⁷ cm⁻³. In this way, doped regions 2002, 2004, 2006,2008, may be formed in the semiconductor layers 508, 512, 516, 520, inthe staircase structure area 902. In an example, phosphorous atoms maybe used as doping atoms to form the doped regions 2002, 2004, 2006,2008. In an alternative example, arsenic atoms or antimon atoms may beused as doping atoms to form the doped regions 2002, 2004, 2006, 2008.

FIG. 21 shows a cross sectional view 2100 of a portion of a switchmatrix region 310 in accordance with yet another embodiment at a secondtime of the manufacturing.

Then, a first step 2102 may be formed, e.g. using a lithographic processand an etching process (e.g., an anisotropic etching process such ase.g. a RIE process), wherein the etching process may be stopped on theupper surface of the fourth insulating layer 518, which is therebyexposed. Next, in an example, a shallow ion implantation may be carriedout to provide a counterdoping of portions of the doped regions 2006,2008. The implantation energy in the shallow ion implantation may be setsuch that the doping atoms may be implanted in the respective uppermostsemiconductor layer 516, 520, which is immediately beneath the uppermostand exposed insulating layers. Thus, illustratively, in lateraldirection, only one of the semiconductor layers 516, 520, isrespectively doped with doping atoms, and the portions of thesemiconductor layer 508, 512, 516, 520, which are arranged below afurther insulating layer or another semiconductor layer 508, 512, 516,520, are not doped. Thus, in an example, the respective uppermostsemiconductor layer 516, 520, is locally counterdoped in thisimplantation process, thereby forming counterdoped regions 2104, 2106.In an example, the counterdoped regions 2104, 2106, may be laterallydisplaced with respect to each other and may be arranged in differentlayers, e.g. in different semiconductor layers, in other words, alsovertically displaced. In an example, the shallow ion implantation may beimplemented as a p-type threshold voltage implantation. In an example,the counterdoped regions 2104, 2106, may be doped in such a manner thatnormally-off transistors may be formed using the counterdoped regions2104, 2106, as the active areas and thus as the channel regions of therespective transistors to be formed. In an example, the implantationenergy for the counter-implantation may be selected to be in the rangefrom about 1 keV to about 10 keV. Furthermore, the concentration of thedoping atoms in the counterdoped regions 2104, 2106, may be selected tobe in the range from about 2*10¹⁷ cm⁻³ to about 10¹⁸ cm⁻³. In this way,the counterdoped regions 2104, 2106, may be formed in the semiconductorlayers 516, 520, within and thus in the result possibly next to thedoped regions 2006, 2008. In an example, boron atoms may be used asdoping atoms to form the counterdoped regions 2104, 2106. Then, in anexample, a tilted ion implantation process may be provided, e.g., usingan implantation angle in the range between approximately 45° toapproximately 60°, to form a first highly doped (e.g., n⁺-doped)connection region 2108 in the counterdoped region 2106. The ionimplantation may be an n-type implantation (e.g. using n-type dopingatoms such phosphorous atoms, arsenic atoms or antimon atoms).Furthermore, the concentration of the doping atoms in the first highlydoped connection region 2108 may be selected to be in the range fromabout 10²⁰ cm⁻³ to about 10²¹ cm³.

FIG. 22 shows a cross sectional view 2200 of a portion of the switchmatrix region 310 in accordance with yet another embodiment at a thirdtime of the manufacturing.

Then, a second step 2202 may be formed, e.g., using a lithographicprocess and an etching process (e.g., an anisotropic etching processsuch as, e.g., a RIE process), wherein the etching process may bestopped on the upper surface of the third insulating layer 514, which isthereby exposed. Next, in an example, a shallow ion implantation may becarried out to provide a counterdoping of portions of the doped region2004. The implantation energy in the shallow ion implantation may be setsuch that the doping atoms may be implanted in the respective uppermostsemiconductor layer 514 (the already doped counterdoped regions 2104,2106 may be covered by an appropriately set implantation mask; it is tobe noted that in an implementation, the same mask may be used for theetching process in 2202 and the implanting process portion of process2004), which is immediately beneath the uppermost and in this case onlyexposed insulating layer, e.g., the third insulating layer 514. Thus,illustratively, in lateral direction, only a portion of onesemiconductor layer 512 is doped with doping atoms, and the portions ofthe semiconductor layer 508, 512, 516, 520, which are arranged below afurther insulating layer or another semiconductor layer 508, 512, 516,520, (or is covered by an implantation mask) are not doped. Thus, in anexample, the respective uppermost exposed semiconductor layer 512 islocally counterdoped in this implantation process, thereby forming afurther counterdoped region 2204. In an example, the furthercounterdoped region 2204 may be laterally displaced with respect to thepreviously formed counterdoped regions 2104, 2106, and may be arrangedin a different layer, in other words, also vertically displaced. In anexample, the shallow ion implantation may be implemented as a p-typethreshold voltage implantation. In an example, the further counterdopedregion 2204 may be doped in such a manner that a normally-off transistormay be formed using the further counterdoped region 2204 as the activeareas and thus as the channel regions of the respective transistor to beformed. In an example, the implantation energy for thecounter-implantation may be selected to be in the range from about 1 keVto about 10 keV. Furthermore, the concentration of the doping atoms inthe further counterdoped region 2204 may be selected to be in the rangefrom about 2*10¹⁷ cm⁻³ to about 10¹⁸ cm⁻³. In this way, the furthercounterdoped region 2204 may be formed in the second semiconductor layer512 within and thus in the result possibly next to the doped region2004. In an example, boron atoms may be used as doping atoms to form thefurther counterdoped region 2204. Then, in an example, a tilted ionimplantation process may be provided, e.g., using an implantation anglein the range between approximately 45° to approximately 60°, to form asecond highly doped (e.g., n⁺-doped) connection region 2206 in thecounterdoped region 2104. The ion implantation may be an n-typeimplantation (e.g., using n-type doping atoms such phosphorous atoms,arsenic atoms or antimon atoms). Furthermore, the concentration of thedoping atoms in the second highly doped connection region 2206 may beselected to be in the range from about 10²⁰ cm⁻³ to about 10²¹ cm⁻³.

FIG. 23 shows a cross sectional view 2300 of a portion of the switchmatrix region 310 in accordance with yet another embodiment at a fourthtime of the manufacturing.

Then, a third step 2302 may be formed, e.g., using a lithographicprocess and an etching process (e.g., an anisotropic etching processsuch as, e.g., a RIE process), wherein the etching process may bestopped on the upper surface of the second insulating layer 510, whichis thereby exposed. Next, in an example, a shallow ion implantation maybe carried out to provide a counterdoping of portions of the dopedregion 2002. The implantation energy in the shallow ion implantation maybe set such that the doping atoms may be implanted in the respectiveuppermost semiconductor layer 510 (the already doped counterdopedregions 2104, 2106, and 2204 may be covered by an appropriately setimplantation mask; it is to be noted that in an implementation, the samemask may be used for the etching process in 2302 and the implantingprocess portion of process 2002), which is immediately beneath theuppermost and in this case only exposed insulating layer, e.g., thesecond insulating layer 510. Thus, illustratively, in lateral direction,only a portion of one semiconductor layer 508 is doped with dopingatoms, and the portions of the semiconductor layers 508, 512, 516, 520,which are arranged below a further insulating layer or anothersemiconductor layer 508, 512, 516, 520, (or is covered by animplantation mask) are not doped. Thus, in an example, the respectiveuppermost exposed semiconductor layer 508 is locally counterdoped inthis implantation process, thereby forming a further counterdoped region2304. In an example, the further counterdoped region 2304 may belaterally displaced with respect to the previously formed counterdopedregions 2104, 2106, 2204, and may be arranged in a different layer, inother words, also vertically displaced. In an example, the shallow ionimplantation may be implemented as a p-type threshold voltageimplantation. In an example, the further counterdoped region 2304 may bedoped in such a manner that a normally-off transistor may be formedusing the further counterdoped region 2304 as the active areas and thusas the channel regions of the respective transistor to be formed. In anexample, the implantation energy for the counter-implantation may beselected to be in the range from about 1 keV to about 10 keV.Furthermore, the concentration of the doping atoms in the furthercounterdoped region 2304 may be selected to be in the range from about2*10¹⁷ cm⁻³ to about 10¹⁸ cm⁻³. In this way, the further counterdopedregion 2304 may be formed in the first semiconductor layer 508 withinand thus in the result possibly next to the doped region 2002. In anexample, boron atoms may be used as doping atoms to form the furthercounterdoped region 2304. Then, in an example, a tilted ion implantationprocess may be provided, e.g., using an implantation angle in the rangebetween approximately 45° to approximately 60°, to form a third highlydoped (e.g., n⁺-doped) connection region 2306 in the counterdoped region2204. The ion implantation may be an n-type implantation (e.g., usingn-type doping atoms such phosphorous atoms, arsenic atoms or antimonatoms). Furthermore, the concentration of the doping atoms in the thirdhighly doped connection region 2306 may be selected to be in the rangefrom about 10²⁰ cm⁻³ to about 10²¹ cm⁻³.

FIG. 24 shows a cross sectional view 2400 of a portion of the switchmatrix region 310 in accordance with yet another embodiment at a fifthtime of the manufacturing.

Then, a fourth step 2402 may be formed, e.g., using a lithographicprocess and an etching process (e.g. an anisotropic etching process suchas, e.g., a RIE process), wherein the etching process may be stopped onthe upper surface of the first insulating layer 506, which is therebyexposed. Then, in an example, a non-tilted or a tilted ion implantationprocess may be provided, e.g., using an implantation angle in the rangebetween approximately 0° to approximately 60°, to form a fourth highlydoped (e.g., n⁺-doped) connection region 2404 in the counterdoped region2304. The ion implantation may be an n-type implantation (e.g., usingn-type doping atoms such phosphorous atoms, arsenic atoms or antimonatoms). Furthermore, the concentration of the doping atoms in the fourthhighly doped connection region 2404 may be selected to be in the rangefrom about 10²⁰ cm⁻³ to about 10²¹ cm⁻³.

FIG. 25 shows a cross sectional view 2500 of a portion of the switchmatrix region 310 in accordance with yet another embodiment at a sixthtime of the manufacturing.

Then, as shown in FIG. 25, a (doped or undoped) polysilicon layer 2502(in an alternative example, a layer made of any other suitableelectrically conductive material may be provided instead of thepolysilicon layer 2502, e.g., a metal layer) may be deposited (e.g.,using a CVD process) on the structure shown in FIG. 24. In an example,the polysilicon layer 2502 may be n⁺-doped using phosphorous atoms, forexample. As shown in FIG. 25, the polysilicon layer 2502 may beconformally deposited on the structure shown in FIG. 24, therebycovering and electrically contacting the connection regions 2108, 2206,2306, 2404, etc., and/or the counterdoped regions 2104, 2106, 2204,2304, etc. (in case no highly doped contact regions are provided).

FIG. 26 shows a cross sectional view 2600 of a portion of the switchmatrix region 310 in accordance with yet another embodiment at a seventhtime of the manufacturing.

Then, an insulating layer 2602 (e.g., an oxide layer 2602, e.g., asilicon oxide layer 2602) may be deposited to fill the space of thestaircase structure area 902 at least up to the upper surface of theinsulating layer 802, followed by a planarization process such as e.g. aCMP process down to the upper surface of the insulating layer 802. Then,in a similar manner as described above, the charge storing layer stackmay be deposited and the gate contacts may be formed. Then, thepolysilicon layer 2502 may be patterned.

FIG. 27 shows a cross sectional view 2700 of a portion of the switchmatrix region 310 in accordance with yet another embodiment at an eighthtime of the manufacturing.

Then, a contact hole (in an alternative example, a plurality of contactholes) may be formed in the insulating layer 2602 to expose a portion ofthe polysilicon layer 2502 (in an example, at any step of the staircasestructure, e.g., in the uppermost step of the staircase structure). Thecontact hole may be filled with electrically conductive material 2702(e.g., tungsten (W) or tungsten silicide (WSi)). In an example, then, ametal layer may be deposited (e.g., using a CVD process or a PVDprocess) and then patterned such that bit lines 2704, which mayrespectively be electrically coupled to the electrically conductivematerial 2702 filled in the contact hole. It should be mentioned that inan alternative example, an arbitrary number of metal layers may beprovided in the back-end-of-line (BEOL) processing to connect therespective components in the memory cell arrangement. In accordance withthis embodiment, only one contact hole is needed due to implementationof the n⁺-polysilicon bridge, implemented e.g. by the polysilicon layer2502. As discussed above, the landed contact (e.g., using the contacthole) could be placed on several positions within the staircasestructure area 902.

FIG. 28 shows a cross sectional view 2800 of a portion of the switchmatrix region 310 in accordance with yet another embodiment at a firsttime of the manufacturing.

Illustratively, this embodiment may be understood as a combination ofthe embodiment shown in FIG. 19 and the embodiment shown in FIGS. 20 to27. Starting from a structure similar to that shown in FIG. 20, therespective steps 2102, 2202, 2302, 2402, may be formed in the staircasestructure area 902 by a repeated process which may include (in eachrepetition) an anisotropic etching (e.g., a RIE etching) (e.g., therebyexposing the upper surface of the respective doped region 2002, 2004,2006, 2008) of one respective step, a further anisotropic etching (e.g.a RIE etching), thereby exposing the upper surface of the followingdoped region 2002, 2004, 2006, forming spacers 2802, 2804, 2806 (e.g.,made of an insulating material such as e.g. an oxide (e.g., siliconoxide), and counterdoping of the exposed region of the respective dopedregion 2002, 2004, 2006, 2008 to form the respective counterdopedregions 2104, 2106, 2204, 2304.

FIG. 29 shows a cross sectional view 2900 of a portion of the switchmatrix region 310 in accordance with yet another embodiment at a secondtime of the manufacturing.

Then, as shown in FIG. 29, a (doped or undoped) polysilicon layer 2502(in an alternative example, a layer made of any other suitableelectrically conductive material may be provided instead of thepolysilicon layer 2502, e.g., a metal layer) may be deposited (e.g.,using a CVD process) on the structure shown in FIG. 28. In an example,the polysilicon layer 2502 may be n⁺-doped using phosphorous atoms, forexample. As shown in FIG. 29, the polysilicon layer 2502 may beconformally deposited on the structure shown in FIG. 28, therebycovering and electrically contacting the connection regions 2108, 2206,2306, 2404, etc., (not shown) and/or the counterdoped regions 2104,2106, 2204, 2304, etc. (in case no highly doped contact regions areprovided).

FIG. 30 shows a cross sectional view 3000 of a portion of the switchmatrix region 310 in accordance with yet another embodiment at a thirdtime of the manufacturing. FIG. 31 shows a cross sectional view 3100 ofa portion of a switch matrix region 310 in accordance with yet anotherembodiment at a fourth time of the manufacturing.

Then, an insulating layer 2602 (e.g., an oxide layer 2602, e.g., asilicon oxide layer 2602) may be deposited to fill the space of thestaircase structure area 902 at least up to the upper surface of theinsulating layer 802, followed by a planarization process such as e.g. aCMP process down to the upper surface of the insulating layer 802. Then,in a similar manner as described above and as shown in FIG. 31, thecharge storing layer stack may be deposited and the gate contacts may beformed. Then, the polysilicon layer 2502 may be patterned. In theembodiment shown in FIG. 31, a wider switch selection line 1902 (widerthan the select switch selection lines 314, 316, 318, 320, 322, 324,326, 328) may additionally be provided for decoding as a commonly sharedselect gate. In this case, smaller select gates (and thus also narrowerswitch selection lines 1904, 1906, 1908, 1910 compared with the width ofthe switch selection lines 314, 316, 318, 320, 322, 324, 326, 328 may beprovided) for decoding. This may save chip area for the memory cellfield 202. Furthermore, in this embodiment, a low resistance may beprovided (and thus higher read currents) due to shorter memory cellstrings.

FIG. 32 shows a cross sectional view 3200 of a portion of the switchmatrix region 310 in accordance with yet another embodiment at a fifthtime of the manufacturing.

Then, a contact hole (in an alternative example, a plurality of contactholes) may be formed in the insulating layer 2602 to expose a portion ofthe polysilicon layer 2502 (in an example, at any step of the staircasestructure, e.g., in the uppermost step of the staircase structure). Thecontact hole may be filled with electrically conductive material 2702(e.g., tungsten (W) or tungsten silicide (WSi)). In an example, then, ametal layer may be deposited (e.g., using a CVD or PVD) and thenpatterned such that bit lines 2704, which may respectively electricallycoupled to the electrically conductive material 2702 filled into thecontact hole. It should be mentioned that in an alternative example, anarbitrary number of metal layers may be provided in the back-end-of-line(BEOL) processing to connect the respective components in the memorycell arrangement. In accordance with this embodiment, only one contacthole is needed due to implementation of the n⁺-polysilicon bridge, e.g.,implemented by the polysilicon layer 2502. As discussed above, thelanded contact (using the contact hole) could be placed on severalpositions within the staircase structure area 902.

With respect to the switch matrix region 310, in various embodiments, afirst staircase may be formed first (one step for each memory layer,e.g., one step for each layer of memory cell strings) and a combinationof n-implants and p-implants may be provided to create the select gateswitch matrix. The staircase may allow a deep n-implant and a shallowp-implant with a very good depth control. The deep n-implants may beprovided for the normally-on transistors to be formed, which may bearranged below the normally-off select transistors to be formed with theshallow p-implants.

In the following, various embodiment of the source line region 308 willbe described in more detail. The source line region 308 may be provided,e.g., for a well contact and a source line contact.

FIG. 33 shows a cross sectional view 3300 of a portion of the sourceline region 308 in accordance with an embodiment.

In this embodiment, also in the source line region 308, a staircasestructure may be formed, e.g. at the same time (but of course with adifferent mask pattern) as the bit line staircase structure 804 isformed, e.g., as described above. In the source line staircasestructure, each step may include a stack of two inversely doped regions,e.g., an n⁺-doped region 3302 (which may serve as a respectivesource/drain contact for a programming operation and/or a readoperation) and a p⁺-doped region 3304 (which may serve as a body contactfor an erase operation) on top of each other, wherein the n⁺-dopedregion 3302 may respectively be provided on top of the p⁺-doped region3304, or, in an alternative example, the p⁺-doped region 3304 mayrespectively be provided on top of the n⁺-doped region 3302. In thisembodiment a steep staircase structure is provided in order to provideelectrical connection down to the lower transistors (in other words toprovide electrical connection down to the lowest semiconductor layer,e.g., to the first semiconductor layer 508).

In an example, the source line staircase structure may be formed at thebeginning of the manufacturing process and, as discussed above, combinedwith the formation of the bit line staircase structure and intermediateburied with oxide. In an example, the formation of the source linestaircase structure may be self-aligned. Furthermore, line-like sourceline etch processes may be used to remove the buried oxide later in theprocess. Then, the formed large contact region may be filled withelectrically conductive material 3306 such as, e.g., titaniumnitride/tungsten (TiN/W), followed by a planarization process (e.g.,using CMP).

It should be noted that the whole source line staircase structure couldin an alternative example also be etched after the gate contact or MOLformation (as e.g. described with reference to FIG. 17), followed byline-like contact as a staircase. Then the implants could be provided,followed by the contact fill and a planarization (e.g., using CMP).

FIG. 34 shows a cross sectional view 3400 of a portion of the sourceline region 308 in accordance with another embodiment.

In this embodiment, instead of the n⁺-doped regions 3302 and thep⁺-doped regions 3304 of FIG. 33, salicided sidewall contacts 3402 areprovided to the specific stacked memory cells (e.g. to the respectivememory cell strings). In an example, the source line region 310 mayinclude a V-shaped source line construction. The salicided sidewallcontacts 3402 may provide a schottky like contact without additionalimplants being required in order to avoid diode formation and to enablebody contact (e.g., −20 V during an erase operation) and string contact(e.g., 0 V during a programming operation and/or a read operation). Inan example, the common source line may be etched after the gate contactformation or the MOL formation, as described above. In an example, aline-like, tapered source line contact may be provided, which may thenbe salicided (e.g., forming titanium salicide (TiSi) or cobalt salicide(CoSi)), wherein the salicidation may be followed by a contact fill(e.g., using tungsten (W) or tungsten silicide (WSi) and a planarizationprocess (e.g., using CMP).

FIG. 35 shows a cross sectional view 3500 of a portion of the sourceline region 308 in accordance with yet another embodiment at a firsttime of the manufacturing.

This embodiment is similar to the embodiment shown in FIG. 33 with thedifference, that the contact filling material 3502 is not a metal but anelectrically conductive material having a higher temperature stabilitysuch as, e.g., polysilicon 3502. In this embodiment, the source linestaircase structure may be formed at the beginning of the manufacturingprocess before the formation of the bit line staircase structure and thegate contacts and the MOL processes, etc. This is possible since thepolysilicon 3502 of the source line contact is not destroyed during thehigh temperature processes used in the formation of the memory cells,for example. After the formation of the source line contact, shallowtrench isolations (STI) may be formed in this embodiment.

FIG. 36 shows a cross sectional view 3600 of a portion of the sourceline region 308 in accordance with yet another embodiment at a secondtime of the manufacturing.

After having deposited the polysilicon 3502, in this example, the chargestoring layer stack (e.g., the charge trapping layer stack) may bedeposited, followed by the formation of the gate contacts.

FIG. 37 shows a cross sectional view 3700 of a portion of the sourceline region 308 in accordance with yet another embodiment at a thirdtime of the manufacturing.

Then, a further insulating layer 802 (which may be used as an auxiliarymask layer such as, e.g., as a hard mask layer), e.g., made of silicondioxide, may be deposited on the upper surface of the fourthsemiconductor layer 520. Next, a contact hole (which may have aline-like structure) may be formed (e.g. etched, e.g. using ananisotropic etching process such as, e.g., a RIE process), therebyexposing a portion of the upper surface of the polysilicon 3502, and thecontact hole may be filled with electrically conductive material suchas, e.g., tungsten (W) or tungsten silicide (WSi), thereby forming thesource line contact of the source line 332 on top of the polysilicon3502.

This embodiment provides a good connection, since the select gates 330,334 are provided over a large area of the polysilicon 3502 filling. Thismay provide a homogeneous on-current in the respective layers (e.g., inthe memory cell strings).

In various embodiments referring to the source line region 308, astaircase is proposed that allows an area optimized n⁺/p⁺-contact to thep-body of the memory cell strings, for example. The n⁺/p⁺-contactsplaced on top of each other and which may be provided for each step ofthe staircase structure may be well defined due to the shallow implantsprovided in various embodiments. Another embodiment proposes a simplesolution with a source line contact realized by an ohmic salicidedcontact (see, e.g., FIG. 34).

In various embodiments, an accurate control of doping profiles and areliable operation of the select gates in a switch matrix region 310 forthe select gates is not required. Thus, the various describedembodiments are suitable even with a large number of layers beingstacked above one another, e.g., in a fin structure.

Some features of various embodiments will be listed below:

-   -   In various embodiments, a staircase like structure may be        provided for a bit line select matrix.    -   In various embodiments, a staircase structure may be made using        a sequence of lithographic and etching processes or using a        single lithographic process followed by a spacer and etch        scheme.    -   In various embodiments, a combination of normally-on transistors        and normally-off transistors may be provided.    -   In various embodiments, a method applicable to a stacked NAND        memory cell field (e.g., a memory cell array), e.g., having two        or more levels, is provided.    -   In various embodiments, a staircase like structure may be        provided for a source line of a stacked memory field (e.g., a        memory cell array).    -   In various embodiments, optionally, an additional select gate        may be provided as a high voltage switch and shrunk select gates        for the switch transistors, for example (thereby achieving area        gain in case of many memory cell levels.    -   In various embodiments, optionally, a source line with a        salicided contact to silicon bodies, for example, may be        provided (with or without n⁺/p⁺-implants).    -   In various embodiments, optionally, non-SOI wafers and stacking        of alternating oxide/silicon wafers by means of deposition may        be provided.    -   In various embodiments, optionally, periphery in bulk silicon        may be provided together with a removal of all SOI layers first        in the periphery region.    -   In various embodiments, optionally, periphery circuitry may be        provided in the top SOI (thus, additional memory levels may be        buried, which may be used for conventional processing in the        periphery, like contacts etc.

In an embodiment, an integrated circuit having a memory cell arrangementis provided. The memory cell arrangement may include a fin structureextending in a first direction. The fin structure may include a firstmemory cell structure having a plurality of first active regions of afirst plurality of memory cells coupled with each other in serialconnection in the first direction, and a second memory cell structurehaving a plurality of second active regions of a second plurality ofmemory cells coupled with each other in serial connection in the firstdirection, wherein the second memory cell structure is disposed abovethe first memory cell structure. The memory cell arrangement may furtherinclude a memory cell contact structure configured to electricallycouple the first memory cell structure and the second memory cellstructure. The memory cell contact structure may have a staircasestructure, a first step of which is configured to electrically contactthe first memory cell structure, and a second step of which isconfigured to electrically contact the second memory cell structure.

In an example of this embodiment, the integrated circuit may furtherinclude a plurality of charge storage layer structures disposed adjacentat least one sidewall of the fin structure covering at least a portionof the first active regions and at least a portion of the second activeregions. The charge storage layer structure may include a floating gatelayer structure. Alternatively, the charge storage layer structure mayinclude a nanocrystalline type layer structure having nanocrystalsembedded in a dielectric, the nanocrystals being configured to storeelectrical charges. Further alternatively, the charge storage layerstructure may include a charge trapping layer structure, e.g., a nitridebased charge trapping layer structure.

In another example of this embodiment, the integrated circuit mayfurther include a switch arrangement including switches configured toindividually select the memory cells. The switches may be formed bytransistors. Furthermore, the switch arrangement may includenormally-off select transistors and normally-on select transistors

In another example of this embodiment, the fin structure may furtherinclude a first insulating layer disposed between the first memory cellstructure and the second memory cell structure.

In yet another example of this embodiment, the fin structure may furtherinclude a second insulating layer disposed above the second activeregions, and a third memory cell structure having a plurality of thirdactive regions of a third plurality of memory cells coupled with eachother in serial connection in the first direction. The third memory cellstructure may be disposed above the second memory cell structure.

In yet another example of this embodiment, the fin structure may furtherinclude source/drain regions adjacent the first active regions and thesecond active regions, respectively.

In yet another example of this embodiment, the fin structure may be madeof a semiconductor material, e.g., silicon.

In yet another example of this embodiment, the fin structure may furtherinclude a plurality of control gate layers disposed next to the chargestorage layer structures.

In an example of this embodiment, the memory cell contact structure mayinclude a plurality of contact holes, wherein each contact hole iscoupled with a respective step of the staircase structure.

In another example of this embodiment, the integrated circuit mayfurther include a bit line coupled with the memory cell contactstructure.

In another example of this embodiment, the memory cell contact structuremay be part of the fin structure.

In another example of this embodiment, the first step and the secondstep may each include a first doped region doped with doping atoms of afirst conductivity type. The memory cell contact structure may furtherinclude second doped regions doped with doping atoms of a secondconductivity type, wherein the second conductivity type may be differentfrom the first conductivity type, wherein the second doped regions aredisposed next to first doped regions in the first direction.

In another embodiment, an integrated circuit having a memory cellarrangement is provided. The memory cell arrangement may include a finstructure. The fin structure may include a first memory cell structurehaving at least one first active region of at least one first memorycell, a second memory cell structure having at least one second activeregion of at least one second memory cell, wherein the second memorycell structure is disposed above the first memory cell structure, and amemory cell contact structure configured to electrically couple thefirst memory cell structure and the second memory cell structure,wherein the memory cell contact structure has a staircase structure, afirst step of which is configured to electrically contact the firstmemory cell structure, and a second step of which is configured toelectrically contact the second memory cell structure.

In an example of this embodiment, the integrated circuit may furtherinclude a plurality of charge storage layer structures disposed adjacentat least one sidewall of the fin structure covering at least a portionof the first active regions and at least a portion of the second activeregions. The charge storage layer structure may include a floating gatelayer structure. Alternatively, the charge storage layer structure mayinclude a nanocrystalline type layer structure having nanocrystalsembedded in a dielectric, the nanocrystals being configured to storeelectrical charges. In another alternative, the charge storage layerstructure may include a charge trapping layer structure.

In an example of this embodiment, the integrated circuit may furtherinclude a switch arrangement having switches configured to individuallyselect the memory cells. The switches may be formed by transistors.Furthermore, the switch arrangement may include normally-off selecttransistors and normally-on select transistors.

In an example of this embodiment, the fin structure may further includea first insulating layer disposed between the first memory cellstructure and the second memory cell structure.

In another example of this embodiment, the fin structure may furtherinclude a second insulating layer disposed above the second activeregions, and a third memory cell structure having a plurality of thirdactive regions of a third plurality of memory cells coupled with eachother in serial connection in the first direction, wherein the thirdmemory cell structure may be disposed above the second memory cellstructure.

In another example of this embodiment, the fin structure may furtherinclude source/drain regions adjacent the first active regions and thesecond active regions, respectively.

In another example of this embodiment, the fin structure may be made ofa semiconductor material, e.g., silicon.

In another example of this embodiment, the fin structure may furtherinclude a plurality of control gate layers disposed next to the chargestorage layer structures.

In another example of this embodiment, the memory cell contact structuremay include a plurality of contact holes, wherein each contact hole maybe coupled with a respective step of the staircase structure.

In yet another example of this embodiment, the integrated circuit mayfurther include a bit line coupled with the memory cell contactstructure.

In yet another example of this embodiment, the memory cell contactstructure may be part of the fin structure.

In yet another example of this embodiment, the first step and the secondstep each may include a first doped region doped with doping atoms of afirst conductivity type. Furthermore, the memory cell contact structuremay further include second doped regions doped with doping atoms of asecond conductivity type, wherein the second conductivity type may bedifferent from the first conductivity type. The second doped regions maybe disposed next to first doped regions in the first direction.

In another embodiment, an integrated circuit having a memory cellarrangement is provided. The memory cell arrangement may include asubstrate, a fin structure disposed above the substrate, and a memorycell contacting region. The fin structure may include a memory cellregion having a plurality of memory cell structures being disposed aboveone another, wherein each memory cell structure may include an activeregion of a respective memory cell. The memory cell contacting regionmay be configured to electrically contact each of the memory cellstructures, wherein the memory cell contacting region may include aplurality of contact regions, which are at least partially displacedwith respect to each other in a direction parallel to the mainprocessing surface of the substrate.

In an example of this embodiment, the memory cell contacting region mayfurther include contact holes being arranged substantially perpendicularto the main processing surface of the substrate, wherein each contacthole may be configured to contact a respective one of the contactregions.

In an example of this embodiment, the integrated circuit may furtherinclude a plurality of charge storage layer structures disposed adjacentat least one sidewall of the fin structure covering at least a portionof the active regions. The charge storage layer structure may include afloating gate layer structure. Alternatively, the charge storage layerstructure may include a nanocrystalline type layer structure havingnanocrystals embedded in a dielectric, the nanocrystals being configuredto store electrical charges. In another alternative, the charge storagelayer structure may include a charge trapping layer structure.

In an example of this embodiment, the integrated circuit may furtherinclude a switch arrangement having switches configured to individuallyselect the memory cells. The switches may be formed by transistors.Furthermore, the switch arrangement may include normally-off selecttransistors and normally-on select transistors.

In an example of this embodiment, the fin structure may further includean insulating layer disposed between two memory cell structures.

In another example of this embodiment, the fin structure may furtherinclude source/drain regions adjacent the active regions.

In yet another example of this embodiment, the fin structure may be madeof a semiconductor material, e.g., silicon.

In another example of this embodiment, the fin structure may furtherinclude a plurality of control gate layers disposed next to the chargestorage layer structures.

In yet another example of this embodiment, a bit line may be providedwhich may be coupled with the memory cell contact structure.

In yet another example of this embodiment, the memory cell contactstructure may be part of the fin structure.

In yet another example of this embodiment, each contact region mayinclude a first doped region doped with doping atoms of a firstconductivity type. The memory cell contact structure may further includesecond doped regions doped with doping atoms of a second conductivitytype, wherein the second conductivity type may be different from thefirst conductivity type. The second doped regions may be disposed nextto the contact regions in the direction parallel to the main processingsurface of the substrate.

In yet another example of this embodiment, the contact regions may bedisplaced with respect to each other in a direction perpendicular to themain processing surface of the substrate.

In another embodiment, a method 3800 for manufacturing an integratedcircuit having a memory cell arrangement is provided as shown in FIG.38. The method 3800 may include, in 3802, forming a fin structure. Then,in 3804, a memory cell region may be formed in the fin structure. Thememory cell region may include a plurality of memory cell structuresbeing disposed above one another. Each memory cell structure may includean active region of a respective memory cell. In 3806, a memory cellcontacting region may be formed which is configured to electricallycontact each of the memory cell structures, such that the memory cellcontacting region includes a plurality of contact regions, which are atleast partially displaced with respect to each other in a directionparallel to the main processing surface of the substrate.

In another embodiment, a method 3900 for manufacturing an integratedcircuit having a memory cell arrangement is provided as shown in FIG.39. The method 3900 may include, in 3902, forming a fin structure suchthat the fin structure includes a first memory cell structure having atleast one first active region of at least one first memory cell in thefin structure, and a second memory cell structure having at least onesecond active region of at least one second memory cell, wherein thesecond memory cell structure is disposed above the first memory cellstructure. Then, in 3904, a memory cell contact structure may be formedwhich may be configured to electrically couple the first memory cellstructure and the second memory cell structure, such that the memorycell contact structure has a staircase structure, a first step of whichis configured to electrically contact the first memory cell structure,and a second step of which is configured to electrically contact thesecond memory cell structure.

As shown in FIGS. 40A and 40B, in some embodiments, memory devices suchas those described herein may be used in modules.

In FIG. 40A, a memory module 4000 is shown, on which one or more memorydevices 4004 are arranged on a substrate 4002. The memory device 4004may include numerous memory cells, each of which uses a memory elementin accordance with an embodiment. The memory module 4000 may alsoinclude one or more electronic devices 4006, which may include memory,processing circuitry, control circuitry, addressing circuitry, businterconnection circuitry, or other circuitry or electronic devices thatmay be combined on a module with a memory device, such as the memorydevice 4004. Additionally, the memory module 4000 may include multipleelectrical connections 4008, which may be used to connect the memorymodule 4000 to other electronic components, including other modules.

As shown in FIG. 40B, in some embodiments, these modules may bestackable, to form a stack 4050. For example, a stackable memory module4052 may contain one or more memory devices 4056, arranged on astackable substrate 4054. The memory device 4056 contains memory cellsthat employ memory elements in accordance with an embodiment. Thestackable memory module 4052 may also include one or more electronicdevices 4058, which may include memory, processing circuitry, controlcircuitry, addressing circuitry, bus interconnection circuitry, or othercircuitry or electronic devices that may be combined on a module with amemory device, such as the memory device 4056. Electrical connections4060 are used to connect the stackable memory module 4052 with othermodules in the stack 4050, or with other electronic devices. Othermodules in the stack 4050 may include additional stackable memorymodules, similar to the stackable memory module 4052 described above, orother types of stackable modules, such as stackable processing modules,control modules, communication modules, or other modules containingelectronic components.

While the invention has been particularly shown and described withreference to specific embodiments, it should be understood by thoseskilled in the art that various changes in form and detail may be madetherein without departing from the spirit and scope of the invention asdefined by the appended claims. The scope of the invention is thusindicated by the appended claims and all changes which come within themeaning and range of equivalency of the claims are therefore intended tobe embraced.

1. An integrated circuit comprising a memory cell arrangement, thememory cell arrangement comprising: a fin structure extending in a firstdirection, the fin structure comprising: a first memory cell structurecomprising a plurality of first active regions of a first plurality ofmemory cells coupled with each other in serial connection in the firstdirection; a second memory cell structure comprising a plurality ofsecond active regions of a second plurality of memory cells coupled witheach other in serial connection in the first direction, wherein thesecond memory cell structure is disposed above the first memory cellstructure; a memory cell contact structure configured to electricallycouple the first memory cell structure and the second memory cellstructure, wherein the memory cell contact structure has a staircasestructure, a first step of which is configured to electrically contactthe first memory cell structure, and a second step of which isconfigured to electrically contact the second memory cell structure; andwherein the first step and the second step each comprises a first dopedregion doped with doping atoms of a first conductivity type, wherein thememory cell contact structure further comprises second doped regionsdoped with doping atoms of a second conductivity type, wherein thesecond conductivity type is different from the first conductivity type,wherein the second doped regions are disposed next to the first dopedregions in the first direction.
 2. The integrated circuit of claim 1,further comprising: a plurality of charge storage layer structuresdisposed adjacent at least one sidewall of the fin structure covering atleast a portion of the first active regions and at least a portion ofthe second active regions.
 3. The integrated circuit of claim 2, whereineach charge storage layer structure comprises a structure selected fromthe group consisting of: a floating gate layer structure; ananocrystalline type layer structure comprising nanocrystals embedded ina dielectric, the nanocrystals being configured to store electricalcharges; and a charge trapping layer structure.
 4. The integratedcircuit of claim 1, further comprising: a switch arrangement comprisingswitches configured to individually select the memory cells of the firstand second plurality of memory cells.
 5. The integrated circuit of claim4, wherein the switches comprise transistors.
 6. The integrated circuitof claim 1, wherein the memory cell contact structure comprises aplurality of contact holes, wherein each contact hole is coupled with arespective step of the staircase structure.
 7. The integrated circuit ofclaim 1, further comprising: a bit line coupled with the memory cellcontact structure.
 8. An integrated circuit comprising a memory cellarrangement, the memory cell arrangement comprising: a fin structure,comprising: a first memory cell structure having at least one firstactive region of at least one first memory cell; a second memory cellstructure having at least one second active region of at least onesecond memory cell, wherein the second memory cell structure is disposedabove the first memory cell structure; a memory cell contact structureconfigured to electrically couple the first memory cell structure andthe second memory cell structure, wherein the memory cell contactstructure has a staircase structure, a first step of which is configuredto electrically contact the first memory cell structure, and a secondstep of which is configured to electrically contact the second memorycell structure; and wherein the first step and the second step eachcomprise a first doped region doped with doping atoms of a firstconductivity type, wherein the memory cell contact structure furthercomprises second doped regions doped with doping atoms of a secondconductivity type, wherein the second conductivity type is differentfrom the first conductivity type, wherein the second doped regions aredisposed next to the first doped region in a first direction.
 9. Theintegrated circuit of claim 8, further comprising: a plurality of chargestorage layer structures disposed adjacent at least one sidewall of thefin structure covering at least a portion of the at least one firstactive region and at least a portion of the at least one second activeregion.
 10. The integrated circuit of claim 8, further comprising: aswitch arrangement comprising switches configured to individually selectmemory cells.
 11. The integrated circuit of claim 10, wherein theswitches a comprise transistors.
 12. The integrated circuit of claim 8,wherein the memory cell contact structure comprises a plurality ofcontact holes, wherein each contact hole is coupled with a respectivestep of the staircase structure.
 13. The integrated circuit of claim 8,further comprising: a bit line coupled with the memory cell contactstructure.
 14. An integrated circuit comprising a memory cellarrangement, the memory cell arrangement comprising: a substrate; a finstructure disposed above the substrate, the fin structure comprising: amemory cell region comprising a plurality of memory cell structuresbeing disposed above one another, each memory cell structure comprisingan active region of a respective memory cell; and a memory cellcontacting region configured to electrically contact each of the memorycell structures, wherein the memory cell contacting region comprises aplurality of contact regions which are at least partially displaced withrespect to each other in a direction parallel to a main processingsurface of the substrate; and wherein each of the plurality of contactregions comprises a first doped region doped with doping atoms of afirst conductivity type, wherein each of the plurality of contactregions further comprises second doped regions doped with doping atomsof a second conductivity type, wherein the second conductivity type isdifferent from the first conductivity type, wherein the second dopedregions are disposed next to the first doped region in a firstdirection.
 15. The integrated circuit of claim 14, wherein the memorycell contacting region further comprises contact holes arrangedsubstantially perpendicular to a main processing surface of thesubstrate, wherein each contact hole is configured to contact arespective one of the contact regions.
 16. The integrated circuit ofclaim 14, further comprising a bit line coupled with the memory cellcontacting region.
 17. The integrated circuit of claim 14, wherein eachcontact region comprises a first doped region doped with doping atoms ofa first conductivity type.
 18. The integrated circuit of claim 14,wherein the contact regions are displaced with respect to each other ina direction perpendicular to the main processing surface of thesubstrate.
 19. A method for manufacturing an integrated circuitcomprising a memory cell arrangement, the method comprising: forming afin structure; forming a memory cell region in the fin structure, thememory cell region comprising a plurality of memory cell structuresdisposed above one another, each memory cell structure comprising anactive region of a respective memory cell; and forming a memory cellcontacting region configured to electrically contact each of the memorycell structures, such that the memory cell contacting region comprises aplurality of contact regions which are at least partially displaced withrespect to each other in a direction parallel to a main processingsurface of the substrate, wherein each of the plurality of contactregions comprises a first doped region doped with doping atoms of afirst conductivity type, wherein each of the plurality of contactregions further comprises second doped regions doped with doping atomsof a second conductivity type, wherein the second conductivity type isdifferent from the first conductivity type, wherein the second dopedregions are disposed next to the first doped region in a firstdirection.
 20. A method for manufacturing an integrated circuitcomprising a memory cell arrangement, the method comprising: forming afin structure such that the fin structure comprises a first memory cellstructure having at least one first active region of at least one firstmemory cell in the fin structure, and a second memory cell structurehaving at least one second active region of at least one second memorycell, wherein the second memory cell structure is disposed above thefirst memory cell structure; and forming a memory cell contact structureconfigured to electrically couple the first memory cell structure andthe second memory cell structure, such that the memory cell contactstructure has a staircase structure, a first step of which is configuredto electrically contact the first memory cell structure, and a secondstep of which is configured to electrically contact the second memorycell structure, wherein the first step and the second step eachcomprises a first doped region doped with doping atoms of a firstconductivity type, wherein the memory cell contact structure furthercomprises second doped regions doped with doping atoms of a secondconductivity type, wherein the second conductivity type is differentfrom the first conductivity type, wherein the second doped regions aredisposed next to the first doped regions in the first direction.